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Atomic Layer Epitaxy of Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  26 February 2011

M. Pessa ,
J. Lilja ,
O. Jylhä ,
M. Ishiko  and
H. Asonen
M. Pessa
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
J. Lilja
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
O. Jylhä
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
M. Ishiko
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
H. Asonen
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
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Abstract

At the time being, there is evidently a sharp increase of interest in growth of low-dimensional thin-film structures of semiconducting compounds by the Atomic Layer Epitaxy (ALE) method. Many of the wide-gap II-VI compounds can be grown from elemental source materials by an ALE mode related to Molecular Beam Epitaxy (MBE). This paper concentrates on recent ALE work involving ZnSe- and CdTe- derived diluted magnetic semiconductors (DMS) where a fraction of Zn or Cd is substituted by Mn atoms. It shows that Zn1-xMnxSe/ZnSe and Cd1-xMnxTe/CdTe DMS structures with abrupt interfaces and high structural perfection can be produced at low growth temperatures by the ALE method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 303
Copyright
Copyright © Materials Research Society 1987

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