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Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia

Published online by Cambridge University Press:  28 July 2011

Xinye Liu ,
Sasangan Ramanathan ,
Eddie Lee  and
Thomas E. Seidel
Xinye Liu
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
Sasangan Ramanathan
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
Eddie Lee
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
Thomas E. Seidel
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
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Abstract

Aluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH3) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition (PEALD) on 200 mm silicon wafers. For both thermal ALD and PEALD, the deposition rate increased significantly with the deposition temperature. The deposition rate did not fully saturate even with 10 seconds of NH3 pulse time. Plasma significantly increased the deposition rate of AlN films. A large number of incubation cycles were needed to deposit AlN films on Si wafers. 100% step coverage was achieved on trenches with aspect ratio of 35:1 at 100 nm feature size by thermal ALD. X-ray diffraction (XRD) data showed that the AlN films deposited from 370 °C to 470 °C were polycrystalline. Glancing angle X-ray reflection (XRR) results showed that the RMS roughness of the films increased as the film thickness increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D1.9
Copyright
Copyright © Materials Research Society 2004

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References

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