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Atomic force microscopy and Raman spectroscopy of nanoscale Si/SiO2superlattices.

Published online by Cambridge University Press:  17 March 2011

R. Krishnan
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
G.F. Grom
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
P.M. Fauchet
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
L. Tsybeskov
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
S. Papernov
Affiliation:
Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627
G.I Sproule
Affiliation:
National Research Council, Institute of Microstructural Research, Ottawa, Canada
D.J. Lockwood
Affiliation:
National Research Council, Institute of Microstructural Research, Ottawa, Canada
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Extract

An atomic force microscope (AFM) has been used to optimize the radio frequency (rf)/ radio frequency magnetron sputtering deposition conditions for obtaining atomically smooth, hydrogen free amorphous silicon (a-Si) and silicon dioxide (a-SiO2) thin films. Superlattices composed of periodically repeating units of nanoscale (a-Si/a-SiO2) units were fabricated at these optimized conditions and subsequently crystallized. The amorphous and crystallized superlattices were characterized by AFM and Raman spectroscopy. Raman spectroscopy of the superlattices was performed by enhancing the weak scattered signal and eliminating the silicon substrate signal by using either waveguiding, cross polarization or interferometric enhancement techniques. The enhanced Raman spectrum clearly indicates formation of nanocrystals after crystallization.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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