Article contents
Atomic Defects in Transition Metal Carbides and SiC Studied by Positron Annihilation
Published online by Cambridge University Press: 22 February 2011
Abstract
Nonstoichiometric defects in carbides of the Group IV and V transition metals and radiation-induced atomic defects in SiC were studied by positron lifetime measurements before and after low-temperature (80 K) electron irradiation and subsequent thermal annealing up to 1900 K. Agglomeration of radiation-induced atomic defects which strongly depends on the energy of the irradiation electrons and subsequent decay of the agglomerates in SiC is observed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1994
References
- 3
- Cited by