Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T18:52:37.171Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic and Electronic Structures of Grain Boundary in Chemical Vapor Deposited Diamond Thin Film

Published online by Cambridge University Press:  10 February 2011

Y. Zhang ,
H. Ichinose ,
Y. Ishida ,
K. Ito  and
M. Nakanose
Y. Zhang
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
H. Ichinose
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
Y. Ishida
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
K. Ito
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
M. Nakanose
Affiliation:
Aerospace Division, Nissan Motor Inc., Tokyo, Japan
Get access

Abstract

High resolution electron microscopy and electron energy-loss spectrometry were used to investigate both atomic and electronic structures of grain boundaries in diamond thin films grown by chemical vapor deposition. The atomic structures of {112}σ3 and {114}σ9 <110= tilt boundaries in diamond show different features from those in other diamond structure semiconductors. The electron energy-loss spectra recorded from the grain boundary regions show extra intensity near the energy-loss corresponding to carbon 1s-to-π*; transition, as compared to the spectra recorded from neighboring crystalline regions. This gives the evidence that the dangling bonds are not fully reconstructed along <110= direction in the boundary structure. Atomic models are constructed for these boundaries with the presence of non-tetracoordinated atoms. The stability of the boundary structure is explained by the π-like bonding between the nontetracoordinated atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 355
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thibault, , Rouvière, J. L., and Bourret, A, in Electronic Structure and Properties of Semiconductors, edited by Schroter, W. (VCH, Weinheim, 1991), p. 321.Google Scholar
2. Narayan, , J. Mater. Res. 5, 2414 (1990).Google Scholar
3. Shechtman, , Hutchison, J. L., Robins, L. H., Farabeugh, E. N., and Feldman, A., J. Mater. Res. 8, 473 (1993).Google Scholar
4. Luyten, , Van Tendeloo, G., Amelinckx, S., and Collins, J. L., Phil. Mag. A, 66, 899 (1992).Google Scholar
5. Williams, E., Kong, H. S., and Glass, J. T., J. Mater. Res. 5, 801 (1990).Google Scholar
6. Bruley, and Batson, P. E., Phys. Rev. B, 40, 9888 (1989).Google Scholar
7. Vlachavas, and Pond, R. C., Inst. Phys. Conf Ser. 60, 159 (1981).Google Scholar
8. Bourret, , Billard, J. L., and Petit, M., Inst. Phys. Conf Ser. 76, 23 (1985).Google Scholar
9. Papon, M. and Petit, M., Scripta Met. 19, 391 (1985).Google Scholar