Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T16:52:59.717Z Has data issue: false hasContentIssue false
  • English
  • Français

Asymmetric Mosaic Spread During Relaxation in SiGe/ Si Strained Layer Superlattices Grown on Miscut Substrates

Published online by Cambridge University Press:  15 February 2011

S. Nam  and
M. S. Goorsky
S. Nam
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
M. S. Goorsky
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
Get access

Abstract

The evolution of defects in SiGe/Si strained layer superlattices (SLS)-with thickness and composition near the critical thickness -was investigated. The structures were grown on 2° miscut (001) substrates by ultrahigh vacuum chemical vapor deposition. The samples were then annealed between 700 °C and 900 °C. After annealing, the satellite peak intensity from double axis diffraction decreased and triple axis diffraction showed that this decreased intensity was due to increased mosaic structure. Interestingly, for some of the annealed samples, the (004) reciprocal space maps showed an asymmetric mosaic spread, indicating a preferential tilt. This result stems from a preferential propagation of certain types of misfit dislocations due to the substrate miscut.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 39
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Higashi, G.S., Bean, J.C., Buescher, C., Yadvish, R. and Temkin, H., Appl. Phys. Lett. 56, 2560 (1990).Google Scholar
2. Patton, G.L., Iyer, S.S., Delaage, S.L., Tiwari, S and Stork, J. M., IEEE Electron. Dev. Lett. 9, 165 (1988).Google Scholar
3. Sturm, J.C., Prinz, E.J., Garone, P.M. and Schwartz, P.V., Appl. Phys. Lett. 54, 2707 (1989).Google Scholar
4. Baribeau, J.M., J. Appl. Phys. 74, 3805 (1993).Google Scholar
5. Prokes, S.M. and Wang, K.L., Appl. Phys. Lett. 56, 2628 (1990).Google Scholar
6. Prokes, S.M., Glembocki, O.J., and Wang, K.L., Superlattices and Microstructures, 10, 113 (1991).Google Scholar
7. Baribeau, J.M. and Houghton, D.C., J. Vac. Sci. Technol. B 9, 2054(1991).Google Scholar
8. RADS Rocking Curve Analysis by Dynamic Simulation, Bede Scientific Instruments Ltd., UK (1992).Google Scholar
9. Halliwell, M.A.G., Lyons, M.H., Davey, S.T., Hockly, M., Tuppen, C.G. and Gibbings, C.J., Semicond. Sci. Technol, 4:10, (1989).Google Scholar
10. Leiberich, A. and Levkoff, J., J. Cryst. Growth 100, 330 (1990).Google Scholar
11. Baribeau, J.M., Pascue, R. and Saimoto, S., Appl. Phys. Lett. 57, 1502 (1990).Google Scholar
12. Ayers, J.E. and Ghandhi, S.K., J. Cryst. Growth 113, 430 (1991).Google Scholar
13. Eldredge, J.W., Matney, K.M., Goorsky, M.S., Chui, H.C., and Harris, J.S., J. Vac. Sci. Technol. B (to be published Mar/Apr 1995).Google Scholar
14. LeGoues, F.K., Mooney, P.M., and Chu, J.O., Appl. Phys. Lett 62 140 (1993).Google Scholar