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Assessment of Thin Heteroepitaxial Layers Using Skew Angle Asymmetrical X-Ray Double Crystal Diffraction

Published online by Cambridge University Press:  28 February 2011

S. J. Miles ,
G. S. Green ,
B. K. Tanner ,
M. A. G. Halliwell  and
M. H. Lyons
S. J. Miles
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K
G. S. Green
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K
B. K. Tanner
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K
M. A. G. Halliwell
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K
M. H. Lyons
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K
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Abstract

Asymmetric reflections in which the beam paths are skew with respect to the sample surface have been used to characterize thin heteroepitaxial layers by double axis X-ray diffractometry. By utilizing reflections with Braqg cones which are partially embedded in the sample surface it is possible to tune to grazing the angles of incidence or emergence. Enhanced layer to substrate peak intensity ratio and narrower layer peak widths can be obtained. The technique is demonstrated using skew angle reflections 333, 133 and 044 from a 400Å GaInAsP layer on an InP substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 539
Copyright
Copyright © Materials Research Society 1989

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References

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