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Assessing Ohmic Contacts

Published online by Cambridge University Press:  25 February 2011

H Barry Harrison  and
Geoffery K Reeves
H Barry Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Brisbane 4111, Australia
Geoffery K Reeves
Affiliation:
MMTC-RMIT, Melbourne 3000, Australia
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Abstract

This paper reviews specific contact resistivity pc values obtained theoretically and experimently for a range of semiconducting materials. Techniques of obtaining pc values in terms of measurement, accuracy and reproducibility are then considered and matched to the semiconducting materials previously covered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 31
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Shenai, K., Scott, R.S. and Baliga, B.J., IEEE Trans on Elec Dev, Vol 36, No. 9, 1989.Google Scholar
2. Orsal, B., Alabedra, R., Valenza, M., LeCoy, G. P., Meslage, J. and Boisrobert, C. Y., IEEE Trans on Elec Dev, Vol 35, No 101, 1988.Google Scholar
3. Shockley, W., Report No. AI-TOR-64–207, Air Force Atomic Laboratory, Wright-Paterson Air Force Base, OHIO, September 1964.Google Scholar
4. Chang, C. Y., Fang, Y. K. and Sze, S. M., Solid State Electronics, Pergamon Press, Vol. 14, 1971.Google Scholar
5. Sze, S. M., “Physics of Semiconductor Devices” 2nd ed., New York, Wiley, 1981.Google Scholar
6. Ferry, D. K., Kozicki, M. N. and Raupp, G. B., “Metallization : Performance and Reliability Issues for VLSI and ULSI” SPIE Conf. Proc. No 1596 (San Jose, Calif.), 1991.Google Scholar
7. Harrison, H. B. and Reeves, G. K., IEEE Electron Device Letters, Vol. EDL-5, No. 2, 1984.Google Scholar
8. Nicolet, M. A., Thin Solid Films 52, 1978.Google Scholar
9. Cao, D. X., Harrison, H. B. and Reeves, G. K., MRS Digest of Technical Papers, Boston, December 1987 Google Scholar
10. Nulman, J., Advanced Metallizations in Microelectronics, MRS Symposium Proc. Vol. 181, 1990.Google Scholar
11. Swirhon, S. E., Loh, W. M., Swanson, R. M. and Suraswat, K. C., IEEE Electron Device Letters, EDL-6, 1985.Google Scholar
12. Finchi, M., Guerri, S., Negrini, P. and Scorzoni, A., Thin Solid Films 130, 1985.Google Scholar
13. Williams, J. S. and Short, K. T., “Metastable Materials Formation by Ion Implantation” Vol. 7, New York: Elsevier-North Holland, 1982.Google Scholar
14. Harrison, H. B., Grigg, M., Short, K. T., Williams, J. S. and Zylewicz, A., “Laser and Electron Beam Processing of Materials” Vol. 4, New York: Elsevier-North Holland, 1982.Google Scholar
15. Trumbore, F. A., Bell Syst. Tech. J. 39, 1960.Google Scholar
16. Sai-Halasz, G. A. and Harrison, H. B., IEEE Electron Device Letters, EDL-7, 1986.CrossRefGoogle Scholar
17. Harrison, H. B., Iyer, S. S., Sai-Halasz, G. A. and Cohen, S. A.. Appl. Phys. Lett. 51 (13), 1987.CrossRefGoogle Scholar
18. Shenai, K., IEEE Trans, on Elec. Devices, Vol. ED 34, No. 8, 1987.Google Scholar
19. Murakami, M., Otsuki, A., Tanahasi, K., Takata, H. J., Lustig, N., Gillegari, A., This Conference, C 6.2.Google Scholar
20. Mozzi, R. L., Fabian, W. and Piekasski, F. J., Appl. Phys. Lett. Vol. 35(4), 1979.Google Scholar
21. Pianetta, P. A., Stolte, C. A. and Mansen, J. L., Appl. Phys. Lett., Vol. 36(7), 1980.Google Scholar
22. Barnes, P. A. and Cho, A. Y., Appl. Phys. Lett., Vol. 38(7), 1978.Google Scholar
23. Braslau, N., J. Vac. Sci, Techn., Vol. 19(3), 1981.CrossRefGoogle Scholar
24. Albin, S. and Watkins, L.. IEEE Elec. Dev. Lett., Vol. 11(4), 1990.Google Scholar
25. Prins, I. F., Appl. Phys. Lett., Vol. 41, 1982.Google Scholar
26. Tsai, W. et. al. IEEE Electron Dev. Lett., Vol. 12, 1992.Google Scholar
27. Gildenblat, G. Sh., Grot, S. A., Hatfield, C. W. and Radzin, A. R., IEEE Electron Dev. Lett., Vol. 12, 1991 Google Scholar
28. Zeisse, C. R., Hewett, C. A., Nguyen, R., Zeidler, J. R. and Wilson, R. G., IEEE Elec. Dev. Lett., Vol. EDL-12(11), 1991.Google Scholar
29. Gildenblat, G. Sh., Grot, S. A., Hatfield, C. W., Badzian, A. R. and Badzian, T., IEEE Elec. Dev. Lett., Vol. EDL 11(9), 1990.Google Scholar
30. Moazed, K. L., Nguyen, R. and Zeidler, J. R., IEEE Elec. Dev. Lett. Vol. 9(7), 1988.Google Scholar
31. Grot, S. A., Gildenblat, G. Sh., Hatfield, C. W., Wronski, C. R., Badzian, A. R., Badzian, T. and Messier, R., IEEE Elec. Dev. Lett. Vol. 11(2), 1990.Google Scholar
32. Albin, S. and Watkins, L., IEEE Elec. Dev. Lett., Vol. (4), 1990.Google Scholar
33. Shiomi, H., Nakahata, H., Imai, T., Nishibayashi, Y. and Fujimori, N., Jap. Journ of Appl. Phy., Vol. 28(5), 1989.Google Scholar
34. Sugii, T., Aoyama, T. and Tito, , J. Electrochem. Soc, Vol. 136(10), 1989.Google Scholar
35. Spicer, W. E., Friedman, D. J. and Carey, G. P., J. Vac. Sci. Tech., Vol. ?? 1988.Google Scholar
36. Leech, P. W., J. Appl. Phys., 68(2), 1990.Google Scholar
37. Harrison, H. B., Mat. Res. Soc. Symp. Proc, Vol. 181, 1990.Google Scholar
38. Leech, P. W. and Reeves, G. K., Symp. This Conference, C 5.7.Google Scholar
39. Cox, and Strack, , Solid State Electronics, Permagon, Press. Vol. 10, 1967.Google Scholar
40. Scorzoni, A. and Finetti, M., Material Science Reports (North-Holland-Amsterdam), Vol. 3, No. 2, 1988.Google Scholar
41. Reeves, G. K. and Harrison, H. B., IEEE Elec. Dev., Vol. 3, 1986.Google Scholar
42. Berger, H., J. Electrochem. Soc, Vol. 119, 1972.CrossRefGoogle Scholar
43. Kellner, W., Siemens Forsh. u. Entwickl. Ber., Vol. 4, No. 3, 1975.Google Scholar
44. Reeves, G. K. and Harrison, H. B., IEEE Elec. Dev. Lett., Vol. EDL-3, No. 5, 1982.Google Scholar
45. Reeves, G. K., Solid State Electronics, Vol. 23, 1980.Google Scholar
46. Proctor, S. J. and Linholm, C. W., IEEE Elec Dev. Lett., Vol. EDL-3, 1982.Google Scholar