Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T07:47:26.757Z Has data issue: false hasContentIssue false

a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

Published online by Cambridge University Press:  16 February 2011

G. De Cesare
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
F. Irrera
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
F. Lemmi
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
F. Palma
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
M. Tucci
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
Get access

Abstract

We present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-i-n-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depending on the polarity of the applied voltage. Due to different absorption at different wavelengths, the devices operate as bias-controlled light detectors in either the blue or the red regions. The energy gap and the thickness of the two intrinsic layers have been optimized to obtain a sharp wavelength selection (centered at 430 and 630 nm) with high rejection-ratios and good quantum efficiencies. The I-V characteristics and the device time response are investigated and simulated by SPICE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chang, C. Y., Hong, J. W. and Fang, Y. K., IEE Proceed.-J, 138, 226 (1991).Google Scholar
2. Fang, Y. K., Hwang, S. B., Chen, K. H., Liu, C. R., Tsai, M. J. and Kuo, L. C., IEEE Trans. Electron Devices, 39, 292 (1992).Google Scholar
3. Fang, Y. K., Hwang, S. B., Chen, K. H., Liu, C. R. and Kuo, L. C., IEEE Trans. Electron Devices, 39, 1350 (1992).Google Scholar
4. Tsai, H. K. and Lee, S. C., Appl. Phys. Lett., 52, 275 (1988).Google Scholar
5. Fang, Y. K., Hwang, S. B., Chen, Y. W., and Kuo, L. C., IEEE-Electron Device Lett., EDL-12, 172 (1991).Google Scholar
6. Stiebig, H. and Böhm, M., J. Non-Cryst. Solids, 164–166, 789 (1993).Google Scholar
7. de Cesare, G., Galluzzi, F., Guattari, G., Leo, G., Vincenzoni, R., Bemporad, E., Diam. and Rei. Mat., 2, 773 (1993).Google Scholar
8. Crandall, R. S., J. Appl. Phys,. 53 (4), 3350 (1982).Google Scholar
9. Masini, G., Caputo, D., de Cesare, G., Dobosz, A., and Palma, F., J. Non Cryst. Solids, 164–166, 805 (1993)Google Scholar
10. de Cesare, G., Irrera, F., Palma, F.. Patent pending.Google Scholar