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A-SI:H Image Sensors: Some Aspects of Physics and Performance

Published online by Cambridge University Press:  28 February 2011

K. Rosan  and
G. Brunst
K. Rosan
Affiliation:
Siemens Research Laboratories, D-8000 München 83, West Germany
G. Brunst
Affiliation:
Siemens Research Laboratories, D-8000 München 83, West Germany
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Abstract

High photosensitivity and fast photoresponse have proved a-Si:H to be a suitable thin-film photoconductor for large-size linear image sensors. Besides the a-Si:H bulk properties, the a-Si:H/electrode interfaces are of major influence on the sensor performance. In view of this performance, the readout circuit has to be designed carefully with respect to the desired dynamic range. Care has to be taken to avoid electrostatic hazards when mounting the sensor, as the breakdown voltage of a-Si:H sensor elements was found to be about 60 volts.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 683
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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