Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-19T05:05:24.970Z Has data issue: false hasContentIssue false
  • English
  • Français

a-Si TFT Technologies for AM-LCDS

Published online by Cambridge University Press:  16 February 2011

Nobuki Ibaraki
Nobuki Ibaraki*
Affiliation:
Toshiba Corporation, Display Device Engineering Laboratory, 8 Shinsugita-cho, Isogo-ku, Yokohama 235, Japan
Get access

Abstract

A technical trend for a-Si TFTs is their application to large-size, high-pixel density AM-LCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows

(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.

(2) Ion doping technology: This non-Mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The Major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 749
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ibaraki, N., Proc. 12th Int. Display Res. Conf. (1992) 205, J. Institute of Television Eng. Japan, 47 (1993) 600 (in Japanese)Google Scholar
[2] Nishida, S., Uchida, H., Kaneko, S., Mat. Res. Soc. Symp Proc. 219 (1991) 303 Google Scholar
[3] TRIM 91.08 by Ziegler, J.F., Biersack, J.P., IBM-Research, 28–0, Yorktown, New York 10598 USA Google Scholar
[4] Kakkad, R., Shimano, T., Ibaraki, N., Jpn. J. Appl. Phys. 31 (1992) 4563, Ext. Abstract 1992 Int. Conf. Solid State Devices & Materials, (1992) 152Google Scholar
[5] Shimano, T., Kakkad, R., Ibaraki, N., Ext. Abstract 1993 Int. Conf. SSDM (1993) 1008 Google Scholar
[6] Akiyama, M., Ikeda, Y., Ikeda, M., Suzuki, K., Digest of Tech. Papers, Society Information Display Int. Symp. (1993) 887 Google Scholar