Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T21:26:53.605Z Has data issue: false hasContentIssue false

As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

Published online by Cambridge University Press:  28 February 2011

Ken'ichi Kuroda
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Masami Tanioku
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Kazuyoshi Kojima
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Koichi Hamanaka
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Get access

Abstract

Superconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb.The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Maeda, H. et al. : Jpn.J.Appl.Phys. 27(1988)L209.Google Scholar
2 Fukutomi, M. et al. : Jpn.J.Appl.Phys. 27(1988)L1484.Google Scholar
3 Asano, H. et al. : Jpn.J.Appl.Phys. 27.(1988)L1487.Google Scholar
4 Matsushima, T. et al. : Jpn.J.Appl.Phys. 28(1989)L97.Google Scholar
5 Miura, S. et al. : Appl.Phys.Lett. 55(1989)1360.Google Scholar
6 Satoh, T. et al. : Appl.Phys.Lett. 55(1989)702.Google Scholar
7 Nishimori, Y. et al. : Kobayashi: Jpn.J.Appl.Phys. 28(1989)L1220.Google Scholar
8 Masumoto, H., Goto, T. and Hirai:, T. Appl.Phys.Lett. 55(1989)498.Google Scholar
9 Hakuraku, Y. et al. : Jpn.J.Appl.Phys. 28(1989)L819.Google Scholar
10 Tanaka, A., Kamehara, N. and Niwa:, K. Appl.Phys.Lett. 55(1989)1252.Google Scholar
11 Kojima, K. et al. : Jpn.J.Appl.Phys. 28(1989)L643.Google Scholar
12 Kuroda, K. et al. : Jpn.J.Appl.Phys. 28(1989)1586.Google Scholar
13 Takano, M. et al. : Jpn.J.Appl.Phys. 27(1988)L1041.Google Scholar
14 Togano, K. et al. : Appl.Phys.Lett. 53(1988)1329.Google Scholar