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As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation

Published online by Cambridge University Press:  25 February 2011

R. Angelucci ,
M. Merli ,
S. Solmi ,
A. Armigliato ,
E. Gabilli ,
D. Govoni  and
A. Poggi
R. Angelucci
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
M. Merli
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
S. Solmi
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
A. Armigliato
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
E. Gabilli
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
D. Govoni
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
A. Poggi
Affiliation:
CNR — Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
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Abstract

Good quality p+/n and n+/p shallow junctions (< 0.15 um) with reverse current density of few nA/cm2 and low contact resistivity (∼ 5×10–7 Ω cm2) have been fabricated by using Mo suicide and Rapid Thermal Annealing (RTA). The processes of implantation through Mo films and into MoSi2 layers have been comparatively analysed on the basis of SIMS and carrier concentration profiles, TEM observations and DLTS measurements. In the case of n+/p diodes fabricated by ITM technology slightly worse leakage currents have been observed, in spite of the better planarity of the silicide-silicon interface exhibited by these structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 751
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Murarka, S.P., Microelectronic Materials and Processing, Leavy, R.A. Ed. (Academic Press, New York, 1988) p. 257–328.Google Scholar
2 Wong, D.L., Ku, Y.H., Lee, S.K., Louis, E., Alvi, N.S., Chu, P., J.Appl.Phys. 61, 5084 (1987).Google Scholar
3 Van Den Hove, L., Wolters, R., Maex, K., De Keersmaecker, R.F., Declerck, G.J., IEEE Trans. Electron Devices 34, 554 (1987).Google Scholar
4 Tsaur, B-Y., Chen, C.K., Anderson, C.H. Jr., Kwong, D.L., J.Appl.Phys. 57, 1890 (1985).Google Scholar
5 Laborde, O., Thomas, O., Senateur, J.P., Madar, R., J.Phys.F: Met.Phys. 16, 1745 (1986).Google Scholar
6 Martin, T.L., Mahan, J.E., J.Mater.Res. 1 493 (1986).Google Scholar
7 Solmi, S., Angelucci, R., Cembali, F., Servidori, M., Anderle, M., Appl.Phys.Lett. 51, 331 (1987).Google Scholar
8 Solmi, S. and Servidori, M., in Ion Implantation in Semiconductors, edited by Stievenard, D. and Bourgain, I.C. (Trans.Tech.Publ., Zurich, 1988) p. 65.Google Scholar
9 Gas, P., Deline, V., d'Heurle, F.M., Michel, A., Scilla, G., J.Appl.Phys. 60, 1634 (1986).Google Scholar
10 Maex, K., De Keersmaecker, R.F., Ghosh, G., Delaey, L. and Probst, V., J.Appl.Phys., in press.Google Scholar
11 Gessner, J., Rennau, M., Schubert, S., Vetter, E., European Workshop on Refractory Metals and Suicides, Heugelhoef, 20-22 March 1989.Google Scholar