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Arsenic Diffusion in Intrinsic Gallium Arsenide

Published online by Cambridge University Press:  10 February 2011

G. Bösker ,
N.A. Stolwijk ,
H. Mehrer ,
U. Södervall ,
J.V. Thordson ,
T.G. Anderson  and
A. Burchard
G. Bösker
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, [email protected]
N.A. Stolwijk
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany
H. Mehrer
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany
U. Södervall
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
J.V. Thordson
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
T.G. Anderson
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
A. Burchard
Affiliation:
ISOLDE Collaboration, CERN, CH-1211 Geneva 23, Switzerland
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Abstract

Self-diffusion on the As sublattice in intrinsic GaAs was investigated in a direct way by As tracer diffusion measurements using the radioisotopes 73As and 76As and in an indirect way by annealing of buried nitrogen doping layers in epitaxially grown GaAs/GaAs:N heterostructures. The latter experiments were analyzed by secondary ion mass spectroscopy and interpreted within the framework of the kick-out mechanism yielding the As diffusivities mediated by As interstitials IAs. Comparison of with tracer diffusion coefficients – including data reported in the literature–points to a substantial contribution of IAs to As diffusion in intrinsic GaAs under As-rich ambient conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 347
Copyright
Copyright © Materials Research Society 1998

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References

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