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Aromatic Polyurea for High Temperature High Energy Density Capacitors

Published online by Cambridge University Press:  01 February 2011

Yong Wang
Affiliation:
[email protected]@hotmail.com, The Pennsylvania State University, Department of Electricalal Engineering, University Park, Pennsylvania, United States
Xin Zhou
Affiliation:
[email protected], The Pennsylvania State University, University Park, Pennsylvania, United States
Minren Lin
Affiliation:
[email protected], The Pennsylvania State University, University Park, Pennsylvania, United States
Sheng-Guo David Lu
Affiliation:
[email protected], The Pennsylvania State University, University Park, Pennsylvania, United States
Jun-Hong Lin
Affiliation:
[email protected], The Pennsylvania State University, University Park, Pennsylvania, United States
Qiming Zhang
Affiliation:
[email protected], The Pennsylvania State University, University Park, Pennsylvania, United States
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Abstract

We investigate aromatic polyureas which can be fabricated in the form of thin films through CVD. It was found that the polymer possesses a flat dielectric response (k∼ 4.2 and loss <1%)) to more than 200°C. The frequency-independent dielectric properties in the investigated frequency range(1kHz∼1MHz), low conductance, low dissipation factor (∼0.005), high breakdown strength (>800MV/m), high energy density (>12J/cm3) and high efficiency suggest this polymer can be a good candidate material for high temperature energy storage capacitors. Breakdown strength was analyzed with Weibull model over a broad temperature range (25°C ∼180°C). Experimental results indicate that aromatic polyurea is more like a nonpolar linear dielectric material because of its highly cross-linked structures. The experiment results further show that this polymer maintains its high performance even at high temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Sarjeant, W. J., Zirnheld, J., and MacDougall, F. W., IEEE Trans. Plasma Sci. 26, 1368 (1998).Google Scholar
2. Chu, B. J., Zhou, X., Ren, K. L., Neese, B., Lin, M. R., Wang, Q., Bauer, F., and Zhang, Q. M., Science 313, 334 (2006).Google Scholar
3. Kirschman, R., High-Temperature Electronics (Wiley-IEEE Press, 1998).Google Scholar
4. Khachen, W., Suthar, J., Stokes, A., Dollinger, R., IEEE Trans. Electr. Insul. 28, 876 (1993).Google Scholar
5. Takahashi, Y., Ukishima, S., Iijima, M., and Fukada, E., J. Appl. Phys. 70, 6983 (1991).Google Scholar
6. Chen, Q., Wang, Y., Zhou, X., Zhang, Q. M., Appl. Phys. Lett. 92 142909 (2008).Google Scholar
7. Dissado, L. A. and Fothergill, J. C., Electrical Degradation and Breakdown in Polymers (P. Peregrinus, London, 1992).Google Scholar
8. Aboelfotoh, M. O. and Feger, C., Phys. Rev. B 47, 13395 (1993).Google Scholar