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Area Selective Laser Chemical Vapor Deposition of Diamond

Published online by Cambridge University Press:  15 February 2011

M. Lindstam ,
M. Boman ,
K. Larsson ,
G. Stenberg  and
J.-O. Carlsson
M. Lindstam
Affiliation:
Uppsala University, Institute of Chemistry, Box 531, S-751 21 Uppsala, Sweden.
M. Boman
Affiliation:
Uppsala University, Institute of Chemistry, Box 531, S-751 21 Uppsala, Sweden.
K. Larsson
Affiliation:
Uppsala University, Institute of Chemistry, Box 531, S-751 21 Uppsala, Sweden.
G. Stenberg
Affiliation:
Uppsala University, Institute of Chemistry, Box 531, S-751 21 Uppsala, Sweden.
J.-O. Carlsson
Affiliation:
Uppsala University, Institute of Chemistry, Box 531, S-751 21 Uppsala, Sweden.
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Abstract

High quality diamond spots were deposited on silicon substrates by a hot filament process combined with laser heating. A mixture of CH4(1.8 vol%) and H2was passed over a tantalum filament having a temperature of about 2200 °C. The substrate temperature was varied by small adjustments of the filament power. A focused laser beam was used to locally raise the temperature on the substrate surface. By a proper choice of filament temperature, background substrate temperature and laser induced temperature, isolated islands of polycrystalline diamond could be deposited on the silicon substrate. The deposited diamond spots were characterized by micro-Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and scanning force microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 607
Copyright
Copyright © Materials Research Society 1996

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References

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