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Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System
Published online by Cambridge University Press: 25 February 2011
Abstract
Ion beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.
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- Copyright © Materials Research Society 1990
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