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Applications of Raman Spectroscopy in Cu CMP: In-situ Detection of Chemical Species in the Slurry

Published online by Cambridge University Press:  01 February 2011

Siddartha Kondoju ,
Pierre Lucas ,
Srini Raghavan ,
Paul Fischer ,
Mansour Moinpour  and
Andrea Oehler
Siddartha Kondoju
Affiliation:
[email protected], The University of Arizona, Materials Science and Engineering, 4715 E Fortlowell Rd, Tucson, AZ, 85719, United States
Pierre Lucas
Affiliation:
[email protected], The University of Arizona, Tucson, AZ, 85721, United States
Srini Raghavan
Affiliation:
[email protected], The University of Arizona, Tucson, AZ, 85721, United States
Paul Fischer
Affiliation:
[email protected], Intel Corp., Components Research, Portland, OR, 97124, United States
Mansour Moinpour
Affiliation:
[email protected], Intel Corp., Components Research, Santa Clara, CA, 95052, United States
Andrea Oehler
Affiliation:
[email protected], Intel Corp., Fab Materials, Portland, OR, 97124, United States
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Abstract

Slurries used for copper CMP have a rich chemistry, which may change during the course of polishing due to consumption and decomposition of molecular species. Various aspects, such as small layer thickness (<50 μm), continuous flow of the slurry, and dynamics of the film removal process pose great challenge to the monitoring of slurry components between the pad and the wafer. The slurry constituents such as oxidants and corrosion inhibitors have unique signatures that can be detected using spectroscopic techniques. In this paper, work carried out to explore the use of Raman spectroscopy to detect and quantitate chemical species such as hydroxylamine, benzotriazole and hydrogen peroxide in-situ will be presented. More detailed study pertaining to the protonation of hydroxylamine with respect to the pH will also be presented. An abrasion cell integrated with a Raman spectrometer was used to make the measurements.

Keywords

CMPslurryRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F12-02
Copyright
Copyright © Materials Research Society 2006

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