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Applications of Optical Emission Spectroscopy to Semiconductor Processing

Published online by Cambridge University Press:  21 February 2011

John G. Shabushnig ,
Paul R. Demko  and
Richard N. Savage
John G. Shabushnig
Affiliation:
PT Analytical, Inc., 780 E. Trimble Rd., San Jose, CA 95131
Paul R. Demko
Affiliation:
PT Analytical, Inc., 780 E. Trimble Rd., San Jose, CA 95131
Richard N. Savage
Affiliation:
SC Technology, Inc., 221 Dempsey Rd., Milpitas, CA 95035
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Abstract

Optical emission spectroscopy (OES) has proven to be a valuable tool in the development and production of state-of-the-art semiconductor devices. Application to the plasma etching of a variety of materials necessary for integrated circuit fabrication is discussed, with particular emphasis placed on etch endpoint analysis. The utility of OES techniques in monitoring photolithographic processes is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 77
Copyright
Copyright © Materials Research Society 1985

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References

[l] Kern, W. and Deckert, C., “Thin Film Processes” (Acadenic, New York, N.Y., 1978), Vossen, J. and Kern, W., eds., pg. 401 Google Scholar
[2] Flamm, D. and Donnelly, V., Plasma Chem. Plasma Proc., 1, 317 (1981)CrossRefGoogle Scholar
[3] Harshbarger, W., Porter, R., Miller, T., and Norton, P., J. Appl. Spectrosc., 31, 201 (1977)Google Scholar
[4] Vossen, J. J Electrochem. Soc., 126, 319 (1979)Google Scholar
[5] Gerlach-Meyer, U., Coburn, J., and Kay, E., Surface Sci., 103, 177 (1981)CrossRefGoogle Scholar
[6] Dobson, C., Microelectr. Manuf. and Test., 4, 18 (1981)Google Scholar