Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-05T14:30:15.222Z Has data issue: false hasContentIssue false
  • English
  • Français

Applications of Laser Annealing in IC Fabrication

Published online by Cambridge University Press:  15 February 2011

L.D. Hess ,
G. Eckhardt ,
S.A. Kokorowski ,
G.L. Olson ,
A. Gupta ,
Y.M. Chi ,
J.B. Valdez ,
C.R. Ito ,
E.M. Nakaji  and
L.F. Lou
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G. Eckhardt
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
A. Gupta
Affiliation:
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California, USA
Y.M. Chi
Affiliation:
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California, USA
J.B. Valdez
Affiliation:
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California, USA
C.R. Ito
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, California, USA
E.M. Nakaji
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, California, USA
L.F. Lou
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
Get access

Abstract

Laser annealing is discussed in the context of potential applications in the fabrication of advanced solid state components and integrated circuits. General aspects of the uniquetemporal and spatial heating distributions that can be obtained with laser heating are presented, and selected examples are given which illustrate the advantage of special time/temperature heating cycles in the processing of specific semiconductor device structures. The performance of silicon and Hgcdte diodes, polysilicon resistors, multiple stacked polysilicon/oxide capacitors, Al/Si ohmic contacts and MOS/SOS transistors fabricated using laser annealing is significantly improved relative to devices fabricatedusing conventional furnace annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 337
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Supported in part by U.S. Army ERADCOM, Contract No. DAAK20-80-C-0269.

**

Current Address: Dikewood, A Division of Kaman Sciences Corporation 2716 Ocean Park Blvd. Santa Monica, CA 90405

References

REFERENCES

1.Laser-Solid Interaction and Laser Processing-1978, Ferris, S.D., Leamy, H.J., Poate, J.M., eds., AIP Conf. Proc. No. 50 (1979);Google Scholar
1aLaser and Electron Beam Processing of Materials, White, C.W., Peercy, P.S., eds., Academic Press, New York (1980);Google Scholar
1bLaser and Electron Beam Solid Interactions and Materials Processing, Gibbons, J.F., Hess, L.D., Sigmon, T.W., eds., vol. 1, Mater. Res. Soc. Symp. Proc., North Holland, New York (1981);Google Scholar
1cLaser and Electron Beam Interactions with Solids, Appleton, B.R., Celler, G.K., eds., vol. 4, MaterRes. Soc. Symp. Proc., North Holland, New York (1982).Google Scholar
2.Andrews, J.M., J. Electronic Materials 8, 227 (1979).Google Scholar
3.Yaron, G., Hess, L.D. and Olson, G.L., in Laser and Electron Beam Processing of Materials, White, C.W. and Peercy, P.S., Eds. New York, Academic Press, 1980, pp. 626–631.Google Scholar
4.Yaron, G. and Hess, L.D., IEEE Trans. Electron Devices ED–27, 573 (1980);Google Scholar
4aYaron, G., Hess, L.D. and Kokorowski, S.A., Solid-State Electron. 23, 893 (1980).Google Scholar
5.Gat, A., Gibbons, J.F., Magee, T.J., Peng, J., Deline, V.R., Williams, P. and Evans, C.A. Jr., Appl. Phys. Lett. 32, 276 (1978).Google Scholar
6.Miller, G.L., in Laser and Electron Beam Processing of Electronic Materials Anderson, C.L., Celler, G.K. and Rozgonyi, G.A., eds., Princeton, New Jersey, The Electrochemical Society, Inc., 1980, pp. 83–107.Google Scholar
7.Roth, J.A., Olson, G.L., Kokorowski, S.A. and Hess, L.D., in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J.F., Hess, L.D. and Sigmon, T.W. (Elsevier North Holland, New York, 1981), pp. 413–426.Google Scholar
8.Yau, L.D., Solid-State Electronics 17, 1059 (1974).Google Scholar