Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T15:35:26.893Z Has data issue: false hasContentIssue false

Applications of In-Situ UHV and High Resolution Tem to the Study of Small Particles

Published online by Cambridge University Press:  21 February 2011

M. Avalos-Borja
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305 Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. Su
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Q.-H. Guo
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
K. Heinemann
Affiliation:
Eloret Institute, 1178 Maraschino Drive, Sunnyvale, CA 94087
H. Poppa
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
M. Boudart
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

In-situ electron microscopy is a powerful tool for the study of small particles. Since most of the interesting phenomena take place in particles smaller than ˜5 nm, high resolution is highly desirable. In-situ and high resolution conditions are difficult to achieve in a single instrument. We have combined the in-situ UHV capabilities of a modified microscope at Stanford University with the high resolution capabilities of a 200 kV and a UHV-400 kV microscopes at Xerox PARC. Examples are presented, pointing out the advantages of in-situ deposition and treatment, and post deposition ex-situ observation at atomic resolution. Advantages and limitations of this approach are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pashley, D. W., Adv. Phys. 5, 174 (1965).Google Scholar
[2] Takayanagi, K., Kobayashi, K., Yagi, K., and Honjo, G., Thin Solid Films 21, 325 (1974).CrossRefGoogle Scholar
[3] Poppa, H. and Heinemann, K., Surf. Sci. 156, 265 (1985).Google Scholar
[4] Moorhead, R. D., Poppa, H., and Heinemann, K., J. Vac. Sci. Technol. 17, 248 (1980).CrossRefGoogle Scholar
[5] Baker, R. T. K., France, J. A., Rouse, L., and Waite, R. J., J. Catal. 41, 22 (1976).CrossRefGoogle Scholar
[6] Drechsler, M., in Surface Mobilities on Solid Materials, edited by Binh, V. T. (Plenum, New York, 1983).Google Scholar
[7] Wang, T., Lee, C. and Schmidt, L.D., Surf. Sci. 163, 181 (1985).CrossRefGoogle Scholar
[8] Shi, A.-C., Fung, K.K., Welch, J.F., Wortis, M. and Masel, R.I., Mat. Res. Soc. Symp., Proc., 111, p. 59 (1988).CrossRefGoogle Scholar
[9] Smith, D. J. and. Marks, L. D., J. Crystal Growth 54, 433 (1981); Ultramicroscopy 16, 101 (1985).CrossRefGoogle Scholar
[10] Biegelsen, D. K., Ponce, F. A., Krusor, B. S., Tramontana, J. C. and Yingling, R. D., Appl. Phys. Lett. 52, 1779 (1988).CrossRefGoogle Scholar
[11] Heinemann, K. and Poppa, H., J. Vac. Sci. Technol. A 4, 127 (1985).CrossRefGoogle Scholar
[12] Ponce, F. A., Suzuki, S., Kobayashi, H., Ishibashi, Y., Ishida, Y. and Eto, T., in Proc. 44th EMSA, edited by Bailey, G.W. (San Francisco Press, 1986) p. 606.Google Scholar
[13] Fryer, J. R., Nature (London) 220, 1121 (1968).CrossRefGoogle Scholar
[14] Heinemann, K. and Poppa, H., Appl. Phys. Lett. 16, 515 (1970).CrossRefGoogle Scholar
[15] Sanders, J. V., in Catalysis Science and Technology, V.7, edited by Anderson, J.R. and Boudart, M. (Springer-Verlag, Berlin, 1985), p. 51.CrossRefGoogle Scholar
[16] Soria, F., Artal, P., Bescos, J. and Heinemann, K., Ultramicroscopy 24, 19 (1988).CrossRefGoogle Scholar
[17] Yacamán, M. J. and Ocaña, T., Phys. Stat. Sol. A42 571 (1977).CrossRefGoogle Scholar
[18] Braunshweig, E.J., Logan, A.D., Datye, A.K., Mat. Res. Soc. Symp., 111, p. 35 (1988).CrossRefGoogle Scholar