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Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist

Published online by Cambridge University Press:  31 January 2011

Quoc Toan Le ,
Els Kesters ,
L Prager ,
Marcel Lux ,
P Marsik  and
Guy Vereecke
Quoc Toan Le
Affiliation:
[email protected]@hotmail.com, IMEC, 75 Kapeldreef, Leuven, 3001, Belgium
Els Kesters
Affiliation:
[email protected], Imec, Leuven, Belgium
L Prager
Affiliation:
[email protected], IOM, Leipzig, Germany
Marcel Lux
Affiliation:
[email protected], Imec, Leuven, Belgium
P Marsik
Affiliation:
[email protected], Imec, leuven, Belgium
Guy Vereecke
Affiliation:
[email protected], Imec, Leuven, Belgium
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Abstract

This study focused on the effect of UV irradiation on modification of polymethyl methacrylate-based photoresist, and then on wet photoresist (PR) removal of patterned structure (single damascene structure). Three single-wavelength UV sources were considered for PR treatment, with λ = 172, 222, and 283 nm. Modification of blanket PR was characterized using Fourier-transform infrared spectroscopy (FTIR; chemical change), spectroscopic ellipsometry (SE; thickness change), and dissolution in organic solvent (solubility change). While for patterned samples, scanning electron microscopy (SEM) was used for evaluation of cleaning efficiency. In comparison to 172 nm, the PR film irradiated by 222 nm and 283 nm photons resulted in formation of higher concentration in C=C bond. Immersion tests using pure N-methyl pyrrolidone (NMP) at 60 °C for 2 min showed that some improvement in PR removal was only observed for PR films treated by 283 nm UV for short irradiation times. Irradiation by photons at the other two wavelengths did not result in an enhancement of removal efficiency.

The PR film treated by 222 nm photons was chosen for further study with O3/H2O vapor at 90°C. Experimental results showed a complete PR and BARC removal for UV-treated PR, which can be explained by C=C bond cleavage by the oxidizer.

Keywords

infrared (IR) spectroscopylithography (removal)photochemical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D02-09
Copyright
Copyright © Materials Research Society 2009

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References

1 Maex, K. Baklanov, M. R. Shamiryan, D. Iacopi, F. Brongersma, S. H. and Yanovitskaya, Z. S., J. Appl. Phys., 93, 8793 (2003).Google Scholar
2 Shamiryan, D. Baklanov, M. R. Vanhaelemeersch, S.. and Maex, K. J. Vac. Sci. Technol. A, 20, 1923 (2002).Google Scholar
3 Waldfried, C. Escorcia, O. Han, Q. and Smith, P. B. Electrochem. Solid-St. Lett., 6, G137 (2003), and references therein.Google Scholar
4 Claes, M. Le, Q. T. Kesters, E. Lux, M. Urionabarrenetxea, A. Vereecke, G. and Mertens, P. W., ECS Trans., 11 (2), 177 (2007).Google Scholar
5 Le, Q. T., Keldermans, J. Chiodarelli, N. Kesters, E. Lux, M. Claes, M. and Vereecke, G. Jpn. J. Appl. Phys., 47, 6870 (2008).Google Scholar
6 Kesters, E. Claes, M. Le, Q. T. Lux, M. Franquet, A. Vereecke, G. Mertens, P. W. Frank, M.M., Carleer, R. Adriaensens, P. Biebuyck, J. J. Bebelman, S. Thin Solid Films, 516, 3454 (2008).Google Scholar
7 Le, Q. T. Claes, M. Conard, T. Kesters, E. Lux, M. and Vereecke, G. Microelectronic Eng., 86(2), 181 (2009).Google Scholar
8 Gendt, S. De, Wauters, J. and Heyns, M. M. Solid State Technol., 41, 57 (1998).Google Scholar
9 Smedt, F. De, Gendt, S. De, Heyns, M. M. and Vinckier, C. J. Electrochem. Soc., 148, G. 487 (2001), and the references therein.Google Scholar
10 Le, Q. T. Kesters, E. Prager, L. Claes, M. Lux, M. and Vereecke, G. Solid State Phenom., 145-146, 323 (2009).Google Scholar
11 Kesters, E. Claes, M. Le, Q. T. Barthomeuf, K. Lux, M. Vereecke, G. and Durkee, J. B. Microelectronic Eng., 86(2), 160 (2009).Google Scholar
12 Ruck, D. M. Schulz, J. and Deusch, N. Nucl. Instr. Methods Phys. Res. B, 131, 149 (1997).Google Scholar
13 Henzi, P. Bade, K. Rabus, D. G. and Mohr, J. J. Vac. Sci. Technol. B, 24 (4), 1755 (2006).Google Scholar
14 Prager, L. Marsik, P. Gerlach, J. W.. Baklanov, M. R. Naumov, S. Pistol, L. Schneider, D. Wennrich, L., Verdonck, P. Buchmeiser, M. R. Microelectron. Eng., 85, 2094 (2008).Google Scholar