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Application of RTP-CVD Technology to Ulsi Device Fabrication

Published online by Cambridge University Press:  28 February 2011

K. H. Jung ,
T. Y. Hsieh  and
D. L. Kwong
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

Rapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention as a novel in-situ multi-processing tool capable of meeting the stringent requirements of ULSI device fabrication. In this paper, we review the progress made in developing and applying RTP-CVD to ULSI device fabrication. Research areas discussed include epitaxial Si and poly-Si growth, in-situ doping, selective growth, in-situ multi-processing, and novel dielectrics. In addition, the extension of RTP-CVD to novel materials such as GexSi1−x has produced device quality films with successful application in HBTs and Si-based optoelectronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 261
Copyright
Copyright © Materials Research Society 1991

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