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Application Of Room-Temperature Photoluminescence For Characterizing Thermally Processed Cz Silicon Wafers

Published online by Cambridge University Press:  01 February 2011

F. Kirscht ,
B. Orschel ,
S. Kim ,
S. Rouvimov ,
B. Snegirev ,
M. Fletcher ,
M. Shabani  and
A. Buczkowski
F. Kirscht
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
B. Orschel
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
S. Kim
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
S. Rouvimov
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
B. Snegirev
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
M. Fletcher
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
M. Shabani
Affiliation:
SUMCO Japan 314 Nishisangao Noda-shi, Chiba-Ken, 278-0015 Japan
A. Buczkowski
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
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Abstract

PL studies of oxygen precipitation related defects, stress relaxation related defects and doping striations in various silicon materials are presented. The sample spectrum includes a variety of dopant species, and the dopant concentration range covers several 1014 cm-3 to several 1019 cm-3. Lightly doped, precipitation-annealed polished wafers were intentionally contaminated with Fe, Ni and Cu. Several types of epi wafers based on heavily doped substrates have been investigated after full device processing. PL intensity in the investigated doping concentration range is controlled by three basic recombination mechanisms: radiative recombination competing with multi phonon Shockley-Read-Hall (SRH) and Auger recombination. SRH recombination is the major competing mechanism at low dopant concentration, and Auger recombination becomes important at increasing doping levels. Even though not yet fully understood, the PL technique applied in this study has generated practically useful results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F6.5
Copyright
Copyright © Materials Research Society 2002

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