Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-23T03:53:47.448Z Has data issue: false hasContentIssue false

Application Of Room-Temperature Photoluminescence For Characterizing Thermally Processed Cz Silicon Wafers

Published online by Cambridge University Press:  01 February 2011

F. Kirscht
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
B. Orschel
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
S. Kim
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
S. Rouvimov
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
B. Snegirev
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
M. Fletcher
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
M. Shabani
Affiliation:
SUMCO Japan 314 Nishisangao Noda-shi, Chiba-Ken, 278-0015 Japan
A. Buczkowski
Affiliation:
SUMCO USA 1351 Tandem Avenue, N.E. Salem, OR 97303, USA
Get access

Abstract

PL studies of oxygen precipitation related defects, stress relaxation related defects and doping striations in various silicon materials are presented. The sample spectrum includes a variety of dopant species, and the dopant concentration range covers several 1014 cm-3 to several 1019 cm-3. Lightly doped, precipitation-annealed polished wafers were intentionally contaminated with Fe, Ni and Cu. Several types of epi wafers based on heavily doped substrates have been investigated after full device processing. PL intensity in the investigated doping concentration range is controlled by three basic recombination mechanisms: radiative recombination competing with multi phonon Shockley-Read-Hall (SRH) and Auger recombination. SRH recombination is the major competing mechanism at low dopant concentration, and Auger recombination becomes important at increasing doping levels. Even though not yet fully understood, the PL technique applied in this study has generated practically useful results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tajima, M., Appl. Phys. Lett. 32, 719 (1978)Google Scholar
2. Nakamura, M., Kitamura, E., Misawa, Y., Suzuki, T., Nagai, S. and Sunaga, H., J. Electrochem. Soc. 141, 12, 3576 (1994)Google Scholar
3. Higgs, V., Goulding, M., Brinklow, A. and Kightley, P., Appl. Phys. Lett. 60, 1369 (1992)Google Scholar
4. Higgs, V., Kittler, M., Appl. Phys. Lett. 65, 2804 (1994)Google Scholar
5. Kirscht, F., Orschel, B., Higgs, V. and Buczkowski, A., GADEST 1999, Proceedings p. 259 Google Scholar
6. Buczkowski, A. et al., invited talk at 7th High Purity Silicon Symposium (in preparation)Google Scholar