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Application of Photoacoustic Spectroscopy to Porous Silicon

Published online by Cambridge University Press:  10 February 2011

Masato Ohmukai ,
Akiharu Kobayashi ,
Nobutomo Uehara ,
Tetsuya Yamazaki ,
Shinji Fujihara  and
Yasuo Tsutsumi
Masato Ohmukai
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Akiharu Kobayashi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Nobutomo Uehara
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Tetsuya Yamazaki
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Shinji Fujihara
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Yasuo Tsutsumi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
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Abstract

We are investigating applicability of photoacoustic (PA) spectroscopy to porous silicon. Since PA spectroscopy is based on a non-radiative relaxation process, the measurement is of importance as a counterpart to photoluminescent spectroscopy. We studied a dependence of a PA amplitude on a chopping frequency and discussed the influence of a PA signal originated in a silicon substrate. The frequency dependence was elucidated with a two-layer model. Differences in PA spectra are correlated with a photoluminescent efficiency. From the correlation, we believe that non-radiative centers quench the efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 163
Copyright
Copyright © Materials Research Society 1999

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References

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