Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:19:39.267Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films

Published online by Cambridge University Press:  01 February 2011

B.S. So ,
Y.H. You ,
H.J. Kim ,
Y.H. Kim ,
J.H. Hwang ,
D.H. Shin ,
S.R. Ryu ,
K. Choi  and
Y.C. Kim
B.S. So
Affiliation:
Department of Materials Science and Engineering, Hongik University, Seoul, Korea
Y.H. You
Affiliation:
Department of Materials Science and Engineering, Hongik University, Seoul, Korea
H.J. Kim
Affiliation:
Department of Materials Science and Engineering, Hongik University, Seoul, Korea
Y.H. Kim
Affiliation:
Department of Materials Science and Engineering, Hongik University, Seoul, Korea
J.H. Hwang
Affiliation:
Department of Materials Science and Engineering, Hongik University, Seoul, Korea
D.H. Shin
Affiliation:
Viatron Technologies, Seoul, Korea
S.R. Ryu
Affiliation:
Viatron Technologies, Seoul, Korea
K. Choi
Affiliation:
Thin Film Materials Lab., KICET, Seoul, Korea
Y.C. Kim
Affiliation:
Department of Advanced Materials Engineering, Korea University of Technology and Education Chunan, Korea
Get access

Abstract

Activation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A2.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ohno, E., Yoshinouchi, A., Hosoda, T., Itoh, M., Morita, T., and Tsuchimoto, S., Japanese Journal of Applied Physics, 33 635 (1994).10.1143/JJAP.33.635Google Scholar
2 Kawachi, G., Aoyama, T., Mimura, A., and Konishi, N., Japanese Journal of Applied Physics, 33 2092 (1994).10.1143/JJAP.33.2092Google Scholar
3 Yeh, C.-F., Chen, T.-J., Liu, C., and Shao, J., IEEE Electron Device Letters, 19[11] 432 (1993).Google Scholar
4 Myers, R. H. and Montgomery, D.C., Two-Level Factorial Designs, in Response Surface Methodology: Process and Product Optimization Using Designed Experiments, John Wiley &Sons, INC (1995).Google Scholar