Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-20T05:15:38.346Z Has data issue: false hasContentIssue false
  • English
  • Français

Applicability of Shallow-Impurity Doped Silicon to Proton Flux Sensors Using Stable Particle-Induced Conductivity

Published online by Cambridge University Press:  10 February 2011

N. Kishimoto ,
H. Amekura ,
K. Kono  and
C. G. Lee
N. Kishimoto
Affiliation:
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan, [email protected]
H. Amekura
Affiliation:
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan, [email protected]
K. Kono
Affiliation:
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan, [email protected]
C. G. Lee
Affiliation:
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan, [email protected]
Get access

Abstract

High-energy particles incident to a semiconductor sensitively produce electron-hole pairs and the excited current has been used for radiation detectors. Although semiconductors have advantages such as high sensitivity and fast response, a drawback is weakness in radiation damage. To improve the radiation resistance, effects of shallow-impurity doping was explored for Si. Specimens of CZ-Si doped with P or B were bombarded with 17 MeV protons. The radiation-induced current of doped Si has been evaluated, as a function of proton fluence. The signal of particle-induced conductivity showed a fairly constant response to a proton flux, up to 1015 ions/cm2. The fluence range applicable as Si sensors was extended 103-104 times as much as that of non-doped Si, instead of a lower signal-to-noise ratio. Shallow impurities passivate the deep centers of radiation-induced defects, and the radiation tolerance continues until the pre-existent carriers are exhausted. The tolerant fluence is also usable to detect the integrated fluence, by controlling the initial impurity concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 423
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fan, H.Y. and Ramdas, A.K., J.Appl.Phys. 30, 1127(1959).Google Scholar
2. Corbett, J.W., Watkins, G.D., Chrenko, R.M. and McDonald, R.S., Phys.Rev. 121, 1015 (1961).Google Scholar
3. Cheng, L.J., Corelli, J.C., Corbett, J.W. and Watkins, G.D., Phys.Rev. 152, 761 (1966).Google Scholar
4. Whan, R.E. and Vook, F.L., Phys.Rev. 153, 814(1967).Google Scholar
5. Young, R.C. and Corelli, J.C., Phys.Rev. B5, 1455 (1972).Google Scholar
6. Johnson, W.E. and Lark-Horovitz, K., Phys. Rev. 76, 442, (1949).Google Scholar
7. Cheng, L.J. and Swanson, M.L., J.Appl.Phys. 41, 2627(1970) 2627.Google Scholar
8. Amekura, H., Kishimoto, N., Kono, K. and Saito, T., J. Appl. Phys. 77, 4984(1995).Google Scholar
9. Kishimoto, N., Amekura, A., Kono, K. and Saito, T., J. Nucl. Mater. 233–237, 1244(1996).Google Scholar
10. Amekura, H., Kishimoto, N., Kono, K. and Saito, T., Mater. Sci. Forum 196–201, 1159(1996).Google Scholar
11. Ziegler, J.F., Biersack, J.P. and Littmark, U., “The Stopping and Range of Ions in Solids” (Pergamon Press, New York, 1985), Chap.8.Google Scholar
12. Van Vechten, J.A., Inst. Phys. Conf. Ser. No.31, 441(1977).Google Scholar
13. Kono, K., Kishimoto, N., Amekura, H. and Saito, T., Mat. Res. Soc. Symp. Proc. Vol.442, p.287 (1997).Google Scholar
14. Kishimoto, N. and Amekura, H., “Integrated fluence monitor for high-energy particles,” Pat. No.2535786 (1994).Google Scholar