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The Applicability of Fluorinated Silicon Nitride Film As Bottom Antireflective Layer In Deep Ultraviolet Lithography

Published online by Cambridge University Press:  10 February 2011

Jun Byung-Hyuk ,
Han Sang-Soo ,
Kim Dong-Wan ,
Kang Ho-Young ,
Koh Young-Bum ,
Bae Byeong-Soo  and
No Kwangsoo
Jun Byung-Hyuk
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Han Sang-Soo
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Kim Dong-Wan
Affiliation:
Semiconductor R/D center, Samsung Electronics Co. Ltd., Yongin, 449-900, Korea
Kang Ho-Young
Affiliation:
Semiconductor R/D center, Samsung Electronics Co. Ltd., Yongin, 449-900, Korea
Koh Young-Bum
Affiliation:
Semiconductor R/D center, Samsung Electronics Co. Ltd., Yongin, 449-900, Korea
Bae Byeong-Soo
Affiliation:
Semiconductor R/D center, Samsung Electronics Co. Ltd., Yongin, 449-900, Korea
No Kwangsoo
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
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Abstract

This study describes the use of fluorinated silicon nitride film as a bottom antireflective layer (BARL) material suitable for line-patterning in quarter-micron KrF excimer laser lithography. For the structures of photoresist/BARL (300Å)/c-Si and photoresist/BARL (300 Å )/W-Si at a wavelength of 248nm, 0% reflectance could be achieved when the refractive index (n) and extinction coefficient (k) values of the film are 2.11 and 0.68 or 2.05 and 0.59, respectively. The fluorinated silicon nitride thin films on p-type (100) Si substrates obtained by inductively coupled plasma enhanced CVD have been evaluated with the variations of NF3 flow rates under the two conditions of SiH4:N2=2:15 and 3:20 (seem). The films optical constants and reflectance were investigated by spectroscopic ellipsometry combined with a reflectance simulation program. The film n and k values at 248nm vary in the ranges of 1.67~2.35 and 0.01~0.69, respectively, depending on gas flow ratio of SiH4:N2:NF3. Low reflectance of below 5% can be obtained from reflectance simulation for two deposition conditions with a BARL thickness of 300Å. In addition, the reflectance could be reduced to almost 0% by controlling film thickness. Finally, the antireflective layer performance was investigated using KrF excimer laser lithography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 115
Copyright
Copyright © Materials Research Society 1997

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