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Antiphase Domain Structures of CdTe on Sapphire Substrates

Published online by Cambridge University Press:  25 February 2011

Kenji Maruyama ,
Mitsuo Yoshikawa  and
Hiroshi Takigawa
Kenji Maruyama
Affiliation:
FUJITSU LABORATORIES LTD., 10-1 Morinosato-Wakamiya, Atsugi, 243-01, Japan
Mitsuo Yoshikawa
Affiliation:
FUJITSU LABORATORIES LTD., 10-1 Morinosato-Wakamiya, Atsugi, 243-01, Japan
Hiroshi Takigawa
Affiliation:
FUJITSU LABORATORIES LTD., 10-1 Morinosato-Wakamiya, Atsugi, 243-01, Japan
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Abstract

Antiphase domain (APD) structures have been discovered in CdTe layers grown on (0001) sapphire substrates by MOCVD. To explain APD formation, an obstruction model based on a surface-reaction mechanism has been proposed. The proportion of one-phase domains to the total area varies with the [DETe]/[DMCd] ratio (VI/II ratio). A single-domain CdTe layer can be obtained at a VI/II ratio of 5. The APD structure shows a strong correlation with the crystallinity measured by X-ray. For a single-domain CdTe epilayer, theFWHM of the X-ray rocking curve shows 114 arc seconds and the EPD is 6×10 cm−2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 275
Copyright
Copyright © Materials Research Society 1987

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References

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