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Antimony Clustering due to High-dose Implantation

Published online by Cambridge University Press:  17 March 2011

Kentaro Shibahara  and
Dai Onimatsu
Kentaro Shibahara
Affiliation:
Research Center for Nanodevices and Systems Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
Dai Onimatsu
Affiliation:
Research Center for Nanodevices and Systems Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Abstract

Antimony implantation is a promising technique for fabricating ultra-shallow n+/p junctions for extensions of sub-100-nm n-MOSFETs. By increasing the Sb+ implantation dose to 6×1014 cm−2, sheet resistance (Rs) of an implanted layer was reduced to 260 /sq. for rapid thermal annealing (RTA) at 800°C. The obtained junction depth of 19 nm is suitable for sub-100-nm MOSFETs. However, the reduction in the sheet resistance showed a tendency to saturate. No pileup at the Si-SiO2 interface, which was the major origin of dopant loss in lower dose cases was, observed in Sb depth profiles in this case. However, in the case of 900°C RTA, Sb depth profiles indicated that Sb was nearly immobile in the region where Sb concentration exceeded 1×1020 cm−3. These results imply that the major limiting factor of Rs reduction under the highdose condition is Sb precipitation, which is different from the lower dose cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B8.5
Copyright
Copyright © Materials Research Society 2000

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References

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