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Anomolous Behavior of DX Centers in Compositionally Graded GaAs/AlXGa1-XAs:Si Heterojunctions

Published online by Cambridge University Press:  21 February 2011

S.R. Smith  and
A.O. Evwaraye
S.R. Smith
Affiliation:
Wright Laboratory, Materials Directorate, Wright-Patterson Air Force Base, Ohio 45433
A.O. Evwaraye
Affiliation:
Wright Laboratory, Materials Directorate, Wright-Patterson Air Force Base, Ohio 45433
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Abstract

DX centers in compositionally graded GaAs/AlxGa1-x As: Si heterojunctions have been studied using Deep Level Transient Spectroscopy, and Capacitance-Voltage measurements as a function of temperature. We have found that the DLTS peak position moves as the filling pulse amlplitude is increased and that the capture cross section also changes. Three distinct regions characterized by a constant rate of peak movement are seen. The barrier height of the applied Schottky diodes and the carrier concentration profiles were tracked from 300 K to 100 K. Results from graded junctions were compared to results from abrupt junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 193
Copyright
Copyright © Materials Research Society 1994

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