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Anomalous Behavior of Peak Resistance Temperature for low x in As-Deposited La1-xCaxMnO3 Films on NdGao3 and SrTiO3 Substrates

Published online by Cambridge University Press:  10 February 2011

P. R. Broussard  and
V. C. Cestone
P. R. Broussard
Affiliation:
Code 6342, Naval Research Lab, Washington, DC 20375–5343, [email protected]
V. C. Cestone
Affiliation:
Code 6342, Naval Research Lab, Washington, DC 20375–5343, [email protected]
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Abstract

We have grown thin films of La1-xCaxMnO3 using off-axis cosputtering for x ≤ 1/3 onto (001) NdGaO3 and (100) SrTiO3 substrates from individual targets of LaMnO3 and La2/3Ca1/3MnO3. As-deposited films of La2/3Ca1/3MnO3 on NdGaO3 have a peak resistance temperature of ≈ 260 K. We see a difference in the peak temperature between the two types of substrates of ≈ 15 K, with samples on NdGaO3 having higher peak temperatures. As the value of x is reduced from 1/3, the peak resistance temperature decreases until x ≈ 0.15, when the peak temperature has an upturn. Even down to x=0 we still observe a metal-insulator transition (at 185 K) for films on NdGaO3, while samples on SrTiO3 show only activated behavior. We also find a scaling relationship between the peak temperature and the resistivity activation energy of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 181
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Worledge, D.C., Miéville, L., and Geballe, T.H., J. Appl. Phys. 83, 5913 (1998); D.C. Worledge, L. Miéville, and T.H. Geballe, Phys. Rev. B 57 15267 (1998)10.1063/1.367454Google Scholar
2. Soulen, R.J., Byers, J.M., Osofsky, M.S., Nadgorny, B., Ambrose, T., Cheng, S.F., Broussard, P.R., Tanaka, C.T., Nowak, J., Moodera, J.S., A, A. Barry, Coey, J.M.D., Science 282, 85– (1998).10.1126/science.282.5386.85Google Scholar
3. Shreekala, R., Rajeswari, M., Srivastava, R. C., Ghosh, K., Goyal, A., Srinivasu, V. V., Lofland, S. E., Bhagat, S. M., Downes, M., Sharma, R. P., Ogale, S. B., Greene, R. L., Ramesh, R., Venkatesan, T., Rao, R. A. and Eom, C. B., Appl. Phys. Lett. 74, 1886 (1999).10.1063/1.123702Google Scholar
4. Broussard, P.R., Qadri, S.B., Browning, V.M., and Cestone, V.C., to be published in J. Appl. Phys. (1999)Google Scholar
5. Pauw, L. J. van der, Phillips Res. Rep. 13, 1 (1958).Google Scholar
6. Schiffer, P., Ramirez, A.P., Bao, W., and Cheong, S.-W., Phys. Rev. Lett. 75, 3336 (1995).10.1103/PhysRevLett.75.3336Google Scholar
7. Gupta, A., McGuire, T.R., Duncombe, P.R., Rupp, M., Sun, J.Z., Gallagher, W.J., and Xiao, G., Appl. Phys. Lett. 67, 3494 (1995).10.1063/1.115258Google Scholar
8. Ritter, C., Ibarra, M.R., DeTeresa, J.M., Algarabel, P.A., Marquina, C., Blasco, J., Garcia, J., Oseroff, S., and Cheong, S- W., Phys. Rev. B 56, 8902 (1997).10.1103/PhysRevB.56.8902Google Scholar
9. Ju, H.L., Gopalakrishnan, J., Peng, J.L., Li, Qu, Xiong, G.C., Venkatesan, T., and Greene, R.L., Phys. Rev. B 51, 6143 (1995).10.1103/PhysRevB.51.6143Google Scholar
10. The data marked LCMO in Fig. 4 are for La2/3Ca1/3MnO3samples prepared by off-axis sputtering as in Ref. [4] for a wide range of growth conditions.Google Scholar
11. Stroud, R.M., Byers, J.M., Browning, V.M., Cross, J.O., Harris, V.G., Fuller-Mora, W.W., Kim, J., Broussard, P.R., Koller, D., Horowitz, J.S., Chrisey, D.B., Osofsky, M.S., Knies, D.L., and Grabowski, K.S., submitted to Phys. Rev. Lett.Google Scholar