Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:49:30.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing of High Dose C Implanted Si by Pulsed Electron Beam

Published online by Cambridge University Press:  22 February 2011

P. Durupt ,
D. Barbier  and
A. Laugier
P. Durupt
Affiliation:
: Laboratoire de Physique Electronique 2 Université Claude Bernard - Lyon 143, Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex (France)
D. Barbier
Affiliation:
: Laboratoire de Physique de la Matière (LA CNRS n° 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)
A. Laugier
Affiliation:
: Laboratoire de Physique de la Matière (LA CNRS n° 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)
Get access

Abstract

High dose (1–7 1017cm−2), low energy (10–40 keV) C implanted Si samples were annealed by conventional thermal procedure and by pulsed electron beam. Characterization is performed by I.R., electron diffraction and Rutherford Backscattering. Effect of PEBA is equivalent to thermal annealing at 900°C. No C redistribution occurs and a poor recrystallization of the SiC formed during implantation is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 747
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Borders, J.A., Picraux, S.T. and Beezhold, W., Appl.Phys.Lett. 18, 509 (1971)Google Scholar
2.Vaidyanathan, K.V., J.Appl.Phys. 44, 583 (1973)Google Scholar
3.Brack, K., Gorey, E. and Schwuttke, G.H., Cryst.Lattice Defects 4, 109 (1973)Google Scholar
4.Rothemund, W. and Fritzsche, C.R., J.Electrochem.Soc. 121, 586 (1974)Google Scholar
5.Baranova, E.K., Demakov, K.D., Starinin, K.V., Strel'tsov, L.I. and Khaibullin, I.B., Dokl.Akad.Nauk SSSR, 200, 869 (1971)Google Scholar
6.Edelman, F.L., Kuznetsov, O.N., Lezheiko, L.V. and Lubopytova, E.V., Radiat.Eff. 29, 13 (1976)Google Scholar
7.Kimura, T., Kagiyama, S. and Yugo, S., Thin Solid Films 94, 191 (1982)Google Scholar
8.Akimchenko, I.P., Kazdaev, Kh.R., Kamenskikh, I.A. and Krasnopevtsev, V.V., Sov. Phys.Semicond. 13, 219 (1979)Google Scholar
9.Koyama, H., J.Appl.Phys. 51, 3202 (1980)Google Scholar
10.Durupt, P., Canut, B., Gauthier, J.P., Roger, J.A. and Pivot, J., Mat.Res.Bull., 15, 1557 (1980)Google Scholar
11.Laugier, A., Barbier, D., Chemisky, G., 4th E.C. Photovoltaic Conf., D.Reidel Edit. 1007 (1982)Google Scholar
12.Spitzer, W.G., Kleinman, D.A. and Frosch, C.J., Phys.Rev. 113, 133 (1959)Google Scholar
13.Borders, J.A and Beezhold, W. in : Ion implantation in semiconductors, Ruge, I. and Graul, J., eds. (Springer-Verlag, Berlin 1971) p. 241Google Scholar
14.Durupt, P., Canut, B., Roge, J.A., Pivot, J. and Gauthier, J.P., Thin Solid Films 90, 353 (1982)Google Scholar