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Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

Published online by Cambridge University Press:  01 February 2011

Kosuke Takenaka ,
Masao Onishi ,
Manabu Takenshita ,
Toshio Kinoshita ,
Kazunori Koga ,
Masaharu Shiratani  and
Yukio Watanabe
Kosuke Takenaka
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
Masao Onishi
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
Manabu Takenshita
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
Toshio Kinoshita
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
Kazunori Koga
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
Masaharu Shiratani
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
Yukio Watanabe
Affiliation:
Department of Electronics, Kyushu University, Hakozaki, Fukoka 812-8581, Japan
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Abstract

An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.8
Copyright
Copyright © Materials Research Society 2003

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