Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-09T06:08:43.321Z Has data issue: false hasContentIssue false

Anhydrous Hf Processing as an Alternative to Hf/Water Processes

Published online by Cambridge University Press:  10 February 2011

J. Staffa
Affiliation:
The Electronic Materials and Processing Research Laboratory, Department of Electrical Engineering, The Pennsylvania State University University Park, PA 16802, USA
P. Roman
Affiliation:
The Electronic Materials and Processing Research Laboratory, Department of Electrical Engineering, The Pennsylvania State University University Park, PA 16802, USA
Get access

Abstract

The HF/water treatment of silicon surfaces is among the most frequently applied steps in surface cleaning processes. It is utilized for clearing oxides from the silicon surface. Large amounts of ultrapure water are necessary to carry out this operation, both in the HF/water solution itself and the thorough rinse which must follow HF/water processes. Therefore, a gas‐phase alternative to this process would significantly reduce deionized (DI) water consumption. The focus of this paper is the anhydrous hydrofluoric acid (AHF)/alcoholic solvent process which has shown promise as an alternative to the aqueous HF process. In particular, the AHF/methanol process has been studied extensively. This paper presents a comparison between properties of silicon surfaces prepared through the dilute HF/water (dHF) process and those of surfaces prepared through AHF/alcoholic solvent processes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Izumi, A., Matsuka, T., Takeuchi, T., and Yamano, A., in Proc. Second Intern. Symp. Cleaning Technol. Semicond. Dev. Manufact., Ruzyllo, J. and Novak, R. E., Editors, PV92–12, p. 260, The Electrochem. Soc. Proc. Series, Pennington, NJ (1992).Google Scholar
2 Ruzyllo, J., Torek, K., Daffron, C., Grant, R., and Novak, R., J. of Electrochem. Soc., 140, L64(1993).Google Scholar
3 O'Brien, S., Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, p.233 (1993)Google Scholar
4 Primaxx, SubMicron Systems, Inc., Allentown, PA Google Scholar
5 SCP Model 110, QC Solutions, Inc., Woburn, MA Google Scholar
6 Marlow, G. S. and Das, M. B., Solid State Electronics, Vol.25, No.2, p.91 (1982)Google Scholar
7 Roman, P., Hwang, D., Torek, K., Ruzyllo, J., and Kamieniecki, E., MRS Symp. Proc. vol.386, Ultraclean Semiconductor Proc. Tech. and Surf. Chem. Cleaning and PassivationGoogle Scholar
8 Chang, K., Staffa, J., and Ruzyllo, J., submitted for publicationGoogle Scholar