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Angle-Resolved X-Ray Photoelectron Spectroscopy for the Characterization of GaAs(001) and Inp(001) Surfaces

Published online by Cambridge University Press:  25 February 2011

Patrick Alnot ,
J. Olivier  and
F. Wyczisk
Patrick Alnot
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE
J. Olivier
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE
F. Wyczisk
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE
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Abstract

Electron scattering and diffraction in X-ray photoemission spectroscopy (XPS) have been used to characterize GaAs(001) and InP(001) chemically etched surfaces. 6a(3d),As(3d), In(4d) and P(2p) photoelectrons have been observed as a function of polar angles for the two [1–10] and [110] azimuths For kinetic energy range of these photoelectrons the experimental results have been correctly predicted by the single-scattering cluster model with spherical-wave corrections.

The problems of quantitative measurements in XPS have been discussed in relation with the diffraction phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 231
Copyright
Copyright © Materials Research Society 1987

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References

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