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Angle-Resolved Photoemission Study of The Electronic Structures of Auai1 and Ptga2

Published online by Cambridge University Press:  10 February 2011

L.-S. Hsu ,
J. D. Denlinger  and
J. W. Allen
L.-S. Hsu
Affiliation:
Department of Physics, National Chang-Hua University of Education, Chung-Hua, Taiwan, ROC
J. D. Denlinger
Affiliation:
Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109–1120, USA
J. W. Allen
Affiliation:
Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109–1120, USA
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Abstract

In this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 179
Copyright
Copyright © Materials Research Society 1998

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References

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