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Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

Jože Furlan  and
Slavko Amon
Jože Furlan
Affiliation:
University of Ljubljana, Fak. za elektro., Tržaška 25, Ljubljana, Yugoslavia
Slavko Amon
Affiliation:
University of Ljubljana, Fak. za elektro., Tržaška 25, Ljubljana, Yugoslavia
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Abstract

A general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 149
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Shockley, W., Read, W.T., Phys. Rev., 87, 835 (1952).Google Scholar
2. Cohen, M.H., Fritzsche, H., Ovshinsky, S.R., Phys.Rev.Letters, 22, 1065 (1969).CrossRefGoogle Scholar
3. Spear, W.E., LeComber, P.G., Snell, A.J., Phil.Mag., 38, 303 (1978).Google Scholar
4. Taylor, G.W., Simmons, J.G., J.Non-Crystalline Solids, 8–10, 940 (1972).CrossRefGoogle Scholar
5. Card, H.C., Kato, I., Chow, L., Watanabe, H., Kao, K.C., Solar Ener.Mater., 6, 175 (1982).Google Scholar
6. Rose, A., Concepts in Photoconductivity and allied Problems, Interscience Publishers, 118 (1963).Google Scholar
7. Hack, M., Shur, M., IEEE Trans.Electron Devices, ED–31, 539 (1984).Google Scholar