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Analysis of TPD Spectra on Semiconductor Surfaces by Monte Carlo Simulations

Published online by Cambridge University Press:  21 February 2011

Rajesh Venkataramani  and
Klavs F. Jensen
Rajesh Venkataramani
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
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Abstract

This work aims to provide a systematic approach for deriving desorption mechanisms on semiconductor surfaces from a coupling of temperature programmed desorption (TPD) experiments and Monte Carlo (MC) simulations. MC simulations are used to evaluate different desorption schemes to identify mechanisms consistent with experimental results. Effects of nearest neighbor interactions, island formation, and surface reconstructions are quantified through the simulations. Methyl desorption from Ga-rich GaAs is used as a case study to illustrate the MC procedure for interpretation of TPD spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 109
Copyright
Copyright © Materials Research Society 1996

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References

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