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Analysis of the Structure of Light-emitting Porous Silicon by Raman Scattering

Published online by Cambridge University Press:  15 February 2011

Zhifeng Sui ,
Patrick P. Leong ,
Irving P. Herman ,
Gregg S. Higashi  and
Henryk Temkin
Zhifeng Sui
Affiliation:
Department of Applied Physics and Microelectronies Sciences Laboratories, Columbia University, New York, NY 10027
Patrick P. Leong
Affiliation:
Department of Applied Physics and Microelectronies Sciences Laboratories, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Department of Applied Physics and Microelectronies Sciences Laboratories, Columbia University, New York, NY 10027
Gregg S. Higashi
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
Henryk Temkin
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
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Raman spectra from a thick porous silicon film (∼100 μm) that strongly emits in the visible (∼ 6350 Å) at room temperature are obtained. An asymmetric peak with a Raman shift of ∼ 508 - 510 cm−1 and a width of ∼ 40 cm−1 is seen in every spectrum. This Raman feature resembles that of μc-Si, suggesting that the local structure of the porous silicon is a network of interconnected crystalline silicon islands with the island size in the nanometer range., and that the, shape of the islands is more sphere-like than rod-like. The characteristic dimension of the islands in these porous silicon films is estimated to be ∼ 2.5 - 3.0 nm on the basis of an empirical model calculation of phonon confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 13
Copyright
Copyright © Materials Research Society 1992

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References

[1] Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
[2] Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M. and Muller, F., Appl. Phys. Lett. 59, 304 (1991).Google Scholar
[3] Tsai, C., Li, K. -H., Sarathy, J., Shih, S., Campbell, J. C., Hance, B. K., and White, J. M., Appl. Phys. Lett. 59, 2814 (1991).Google Scholar
[4] Bomchil, G., Halimaoui, A., and Herino, R., Appl. Surf. Sci. 41/42, 604 (1989).Google Scholar
[5] Herino, R., Bomchil, G., Barla, K., Bertrend, C., and Ginoux, J. L., J. Electroochem. Soc. 134, 1994 (1987).CrossRefGoogle Scholar
[6] Bomchil, G., Halimaoui, A., and Herino, R., Microelectron. Eng. 8, 293 (1988), and references cited therein.Google Scholar
[7] Searson, P. C., Appl. Phys. Lett. 59, 832 (1991).Google Scholar
[8] Chuang, S.-F., Collins, S. D., and Smith, R. L., Appl. Phys. Lett., 57, 2247 (1989).Google Scholar
[9] Dimaria, D.J., Kirtley, J. R., Pakulis, E. J., Dong, D. W., Kuan, T. S., Pesavento, F. L., Theis, N., and Curto, J. A., J. Appl. Phys. 56, 401 (1984).Google Scholar
[10] Pollak, F. H. and Tsu, R., in Proceedings of the Society of Photo-Optical Engineers (SPIE, Bellingham, WA, 1983), 452, p. 26.Google Scholar
[11] Richter, H., Wang, Z. P., and Ley, L., Solid State Commun., 39, 625 (1981).Google Scholar
[12] Iqbal, Z. and Veprek, S., J. Phys. C: Solid State Phys. 15, 377 (1982).Google Scholar
[13] Campbell, I. H. and Fauchet, P. M., Solid State Commun. 58, 739 (1986).CrossRefGoogle Scholar
[14] Tu, A. and Persans, P.D., Mat. Res. Soc. Symp. Proc., 206, 97 (1991).Google Scholar
[15] Goodes, S. R., Jenkins, T. E., Beale, M. I. J., Benjamin, J. D., and Pickering, C., Semicond. Sci. Technol. 3, 483 (1988).Google Scholar
[16] McMillan, P., in The Physics and Technology of Amorphous SiC2 edited by Devine, R. A. B. (Plenum, New York, 1988), p. 63.Google Scholar