Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-09T09:27:08.271Z Has data issue: false hasContentIssue false

Analysis of Successive Focused Ion Beam Slices by Scanning Electron Imaging and 3D Reconstruction

Published online by Cambridge University Press:  26 February 2011

Terence Yeoh
Affiliation:
[email protected], The Aerospace Corporation, Materials Technology Department, 2350 E El Segundo Blvd, El Segundo, CA, 90245, United States, 310-336-1616
Neil Ives
Affiliation:
[email protected], The Aerospace Corporation, Microelectronics Technology Department, United States
Nathan Presser
Affiliation:
[email protected], The Aerospace Corporation, Microelectronics Technology Department, United States
Gary Stupian
Affiliation:
[email protected], The Aerospace Corporation, Microelectronics Technology Department
Martin Leung
Affiliation:
[email protected], The Aerospace Corporation, Microelectronics Technology Department, United States
John McCollum
Affiliation:
[email protected], Actel Corporation, United States
Frank Hawley
Affiliation:
[email protected], Actel Corporation, United States
Get access

Abstract

An antifuse structure was analyzed using scanning electron microscope imaging and focused ion beam image slicing to generate a form of three-dimensional microscopy. This method reveals nanometer scale features that could not be easily imaged using a single focused ion beam cross-section. A novel end-point detection technique has been developed to control the thickness of the slice to about 2 nm. Voxel imaging and interpretive three-dimensional reconstruction was used to resolve volumes as small as 2 cubic nm3. It was determined that the fusing region for an antifuse is a complex mixture of material phases with an elliptical volume approximately 75 nm in diameter.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Vallett, D.P., Failure analysis requirements for nanoelectronics, IEEE Transactions on Nanotechnology 1 (3), 117121 (2002).Google Scholar
2 FEI Company, AutoScript, Technical Note PN 25564-C, (2000).Google Scholar
3 Holzer, L., Indutnyi, F., Gasser, P.H. et al. , Three-dimensional analysis of porous BaTiOsub 3 ceramics using FIB nanotomography, Journal of Microscopy 216, 8495 (2004).Google Scholar
4 Inkson, B.J., Mulvihill, M., and Mobus, G., 3D determination of grain shape in a FeAl-based nanocomposite by 3D FIB tomography, Scripta Materialia 45 (7), 753758 (2001).Google Scholar
5 Kubis, A.J., Shiflet, G.J., Dunn, D.N. et al. , Focused ion-beam tomography, Metallurgical and Materials Transactions A 35A (7), 19351943 (2004).Google Scholar
6 Kubis, A.J., Vandervelde, T.E., Bean, J.C. et al. , Analysis of the three-dimensional nanoscale relationship of Ge quantum dots in a Si matrix using focused ion beam tomography, Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory, 411417 (2004).Google Scholar
7 Lee, E., Williams, R., Viswanathan, G. B. et al. , 3D Materials Characterization using Dual-Beam FIBSEM Techniques, Microsc Microanal 10 (2), 11281129 (2004).Google Scholar
8 Amira Advanced Visualization Software, TGS, www.tgs.com.Google Scholar