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Analysis of Stresses in a Multilevel Configuration by Using a Design of Experiment Method

Published online by Cambridge University Press:  15 February 2011

M. Ignat ,
A. Chouaf ,
J. M. Terriez  and
M. Marty
M. Ignat
Affiliation:
LTPCM - ENSEEG, BP.75 38402 St Martin d&Hèes - France
A. Chouaf
Affiliation:
LTPCM - ENSEEG, BP.75 38402 St Martin d&Hèes - France
J. M. Terriez
Affiliation:
LTPCM - ENSEEG, BP.75 38402 St Martin d&Hèes - France
M. Marty
Affiliation:
SGS-THOMSON Microelectronics Av. des Martyrs BP. 217 38019 Grenoble Cedex - France
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Abstract

The effects of thermoelastic residual stresses on multilevelstructures was determined by finite element calculation. A design of experiment approach was used, with five geometrical parameters. The results are presented in the form of stress contours, shown as functions of pairs of parameters, with the other parameters held constant. This analysis shows the relative sensitivities to the different parameters with respect to potential damage and failure. Comparison of the results with previous observations of microstructures seems to validate this experimental design approach.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 307
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1 Lloyd, J.R., Yost, F.G., Ho, P.S. (editors) Materials Reliability Issues in Microelectronics (Published by the Mater. Res. Soc. vol.225, 1991).Google Scholar
2 Suhir, E., Camarata, R.C., Chung, D.L., Jone, M. (editors) Mechanical Behaviour of Materials and structures in Microelectronics (Published by the Mater. Res. Soc. Vol.226, 1991).Google Scholar
3 , P.A. Flinn in Thin Films: Stresses and Mechanical Properties II. Edited by Doerner, M.F., Oliver, W.C, Pharr, G.M., Brotgen, F. R. (Mater. Res. Soc. Proc. 188 Pittsburgh, P.A. 1990) pp.3–13.Google Scholar
4 Ignat, M., Chouaf, A., Bernard, C., Terriez, J.M. in Interfaces Between Polymers. Metals and Ceramics. Edited by Dekoven, B.M., Gellman, A.J., Rosenberg, R.. (Mater. Res. Soc. Proc. 155 Pittsburgh, P.A. 1989) pp 357–362.Google Scholar
5 Chouaf, A., Ignat, M., Terriez, J.M., Normandon, P. in Electronic Packaging Materials Science V. 203 MRS (1991) p 177–182.CrossRefGoogle Scholar
6 Ignat, M., Chouaf, A., Normandon, Ph. in Thin Films: Stresses and Mechanical Properties II, edited by Doemer, M.F., Oliver, W. C, Pharr, G.M., Brotgen, F.R. (Mater. Res. Soc. Proc. 188 Pittsburgh, P.A. 1990) pp 97–102.Google Scholar
7 Ignat, M., Chouaf, A., Normandon, P., Gergaud, P., J.J. Bacman in Tungsten and other Advanced Metals for ULSI Applications in 1990, edited by Smith, G. C and Blumenthal, R. (Mater. Res. Soc. Conf. Proc. Pittsburgh, PA, 1991) pp 305–310.Google Scholar
8 Korthomen, M.A., Paszkiet, C.A., Li, C.Y., J. Apply. Phys. 12, 69 (1991).Google Scholar
9 Guo, Q., Whitman, C.S., Keer, L. M, Chung, Y.W., J. Appl. Phys. 11, 69 (1991).Google Scholar
10 Grothuis, S.K. and Schroen, W.H. in Transactions of the IEEE, IRPS.Google Scholar
11 Box, G. E, Draper, N., “Empirical Model-Building and Responses Surfaces”, edited by John Wiley Sons. New York 1987.Google Scholar
12 Luu, R. Phan Tan, Feneville, D., Mathieu, D., “Mdthodologie de la Recherche Explrimentale”, I.P.S.O.I, Editeurs Paris 1983.Google Scholar
13 Marty, M., Ignat, M., Chouaf, A., J.M. Terriez in Transactions IEEE - IPFA (1991).Google Scholar
14 Sauter, A.I. and Nix, W.D. in Finite Element Calculation of Thermal Stresses in Passivated and Un Rassivated Lines Banded to Substrates (Mater. Res. Soc. Proc. 188, 1990.Google Scholar
15 Jones, R.E. in Transactions of the IEEE - IRPS p. 5 (1987).Google Scholar