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Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

Published online by Cambridge University Press:  21 February 2011

N. V. Edwards ,
M. D. Bremser ,
T. W. Weeks Jr ,
R. S. Kern ,
H. Liu ,
R. A. Stall ,
A. E. Wickenden ,
K. Doverspike ,
D. K. Gaskill  and
J. A. Freitas Jr.
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N. V. Edwards
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
T. W. Weeks Jr
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
R. S. Kern
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
H. Liu
Affiliation:
EMCORE Corp., Somerset, NJ 08873 Presently at Hewlett-Packard, San Jose, CA 95131
R. A. Stall
Affiliation:
EMCORE Corp., Somerset, NJ 08873
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Washington, DC 20375
K. Doverspike
Affiliation:
Presently at Hewlett-Packard, San Jose, CA 95131 Naval Research Laboratory, Washington, DC 20375
D. K. Gaskill
Affiliation:
Naval Research Laboratory, Washington, DC 20375
J. A. Freitas Jr.
Affiliation:
Sachs-Freeman Associates, Landover, MD 20785-5396
U. Rossow
Affiliation:
Department of Physics, N. C. State University, Raleigh, NC 27695-8202
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC 27695-7907
D. E. Aspnes
Affiliation:
Department of Physics, N. C. State University, Raleigh, NC 27695-8202
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Abstract

We report the dielectric functions of various GaN samples as measured by spectroscopic ellipsometry. Structure related to the A and B excitons is resolved at room temperature, in principle allowing strain to be assessed. However, the data indicate that dead-layer and dispersion effects are present, preventing a simple interpretation. We discuss various complications including the Edn/dE contribution to dispersion, which is important for laser action. Our data appear to indicate that the spin-orbit splitting of GaN is about 15 meV, somewhat larger than the currently accepted value of about 11 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 405
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Aspnes, D. E. and Studna, A. A., Appl. Opt. 14, 220 (1975).Google Scholar
2 Edwards, N. V., Bremser, M. D., Weeks, T. W. Jr., Kern, R. S., Davis, R. F., and Aspnes, D. E. (submitted for publication).Google Scholar
3 Weeks, T. W. Jr., Bremser, M. D., Ailey, K. S., Carlson, E., Perry, W. G., and Davis, R. F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
4 EMCORE Corporation, Somerset, NJ 08873.Google Scholar
5 Roland, L. B., Doverspike, K., Giordana, A., Fatemi, M., Gaskill, D. K., Skowronski, M., and Freitas, J. A. Jr., Institute of Physics Conf. Series 137, ed. by Spencer, M. G., Devaty, R. P., Edmond, J. A., Asif Khan, M., Kaplan, R., and Rahman, M., p. 429 (1994).Google Scholar
6 Logothetidis, S., Petalas, J., Cardona, M., and Moustakas, T. D., Phys. Rev. B50, 18017 (1994); J. Petalas, S. Logothetidis, S. Boultadakis, M. Alouani, and J. M. Willis, Phys. Rev. B52, 8082 (1995).Google Scholar
7 Hopfield, J. J., J. Phys. Chem. Solids 15, 97 (1960).Google Scholar
8 Pollak, F. H. and Cardona, M., Phys. Rev. 172, 816 (1968).Google Scholar
9 Dingle, R., Sell, D. D., Stokowski, S. E., and Ilegems, M., Phys. Rev. B4, 1211 (1971).Google Scholar
10 Shan, W., Schmidt, T. J., Yang, X. H., Hwang, S. J., Song, J. J., and Goldenberg, B., Appl. Phys. Lett. 66,985 (1995).Google Scholar
11 Hughes, W. C., Rowland, W. H. Jr., and Johnson, M. A. L., ZFujita, S., Cook, J. W. Jr., Schetzina, J. F., Hren, J., and Redmond, J. A., J. Vac. Sci. Technol. B15, 1571 (1995).Google Scholar
12 Redwing, J. M., Tischler, M. A., Loeber, D. A., and Anderson, N. G., presented at the 1995 MRS Spring meeting, San Francisco, CA, 1995 (unpublished).Google Scholar
13 Hopfield, J. J. and Thomas, D. G., Phys. Rev. 132, 563 (1963); F. Evangelisti, A. Frova, and F. Patella, Phys. Rev. B10, 4253 (1974).Google Scholar