Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-20T06:29:12.867Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

Published online by Cambridge University Press:  10 February 2011

P. M. Mooney ,
J. O. Chu ,
J. A. Ott ,
J. L. Jordan-Sweet ,
B. S. Meyerson ,
W. B. Dubbelday ,
I. Lagnado  and
K. L. Kavanagh
P. M. Mooney
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
J. A. Ott
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
J. L. Jordan-Sweet
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
B. S. Meyerson
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
W. B. Dubbelday
Affiliation:
Naval Space and Warfare Systems Center, San Diego, CA 92152 ECE Department, UC San Diego, La Jolla, CA 92093
I. Lagnado
Affiliation:
Naval Space and Warfare Systems Center, San Diego, CA 92152
K. L. Kavanagh
Affiliation:
ECE Department, UC San Diego, La Jolla, CA 92093
Get access

Abstract

Si/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 55
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Houssaye, P.R. de la, Chang, C.E., Offord, B., Johnson, R., Asbeck, P.M., Garcia, G.A. and Lagnado, I., IEEE Electron Device Lett. 16, 289 (1995).Google Scholar
2. Verdonct-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C. and Johnson, J.B., IEEE Trans. Elect. Devices 41, 90 (1994).Google Scholar
3. Mathew, S.J., Niu, G., Dubbelday, W.D., Cressler, J.D. Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., and Lagnado, I., submitted to Electron Device Lett.Google Scholar
4. Mathew, S.J., Niu, G., Dubbelday, W.D., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S. and Lagnado, I., submitted to Electron Device Letters.Google Scholar
5. Fewster, P.F., Semicond. Sci. Technol. 8, 1915 (1993).Google Scholar
6. Mooney, P.M., Jordan-Sweet, J.L., Chu, J.O. and LeGoues, F.K., Appl. Phys. Lett. 66, 3642 (1995); P.M. Mooney, J.L. Jordan-Sweet, K. Ismail, J.O. Chu, R.M. Feenstra and F.K. Legoues, Appl. Phys. Lett. 67, 2373 (1995).Google Scholar
7. Meyerson, B.S., Appl. Phys. Lett. 48, 797 (1986).Google Scholar
8. Lau, S.S., Matteson, S., Mayer, J.W., Revesz, P., Gyulai, J., Roth, J., Sigmon, T.W. and Cass, T.,Appl. Phys. Lett. 34, 76 (1979).Google Scholar
9. Mooney, P.M., Jordan-Sweet, J.L., Stephenson, G.B., LeGoues, F.K. and Chu, J.O., Advances in X-Ray Analysis 38, 181 (1995).Google Scholar
10. Rocking Curve Analysis by Dynamical Simulation, Bede Scientific, Inc.Google Scholar
11. Mooney, P.M., Ott, J.A., Chu, J.O. and Jordan-Sweet, J.L., submitted to Appl. Phys. Lett.Google Scholar
12. Boucaud, P., Wu, L., Guedj, C., Julien, F.H., Sajnes, I., Campidelli, Y. and Garchery, L., J. Appl. Phys. 80, 1414 (1996).Google Scholar