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Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge

Published online by Cambridge University Press:  15 February 2011

B. Yan ,
J. Yang ,
S. Guha  and
A. Gallagher
B. Yan
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
A. Gallagher
Affiliation:
JILA, National Institute of Standards and Technology and University of Colorado, Boulder, CO 80309-0440
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Abstract

Positive ionic energy distributions in modified very-high-frequency (MVHF) and radio frequency (RF) glow discharges were measured using a retarding field analyzer. The ionic energy distribution for H2 plasma with 75 MHz excitation at a pressure of 0.1 torr has a peak at 22 eV with a half-width of about 6 eV. However, with 13.56 MHz excitation, the peak appears at 37 eV with a much broader half-width of 18 eV. The introduction of SiH4 to the plasma shifts the distribution to lower energy. Increasing the pressure not only shifts the distribution to lower energy but also broadens the distribution. In addition, the ionic current intensity to the substrate is about five times higher for MVHF plasma than for RF plasma. In order to study the effect of ion bombardment, the deposition of a-Si alloy solar cells using MVHF was investigated in detail at different pressures and external biases. Lowering the pressure and negatively biasing the substrate increases ion bombardment energy and results in a deterioration of cell performance. It indicates that ion bombardment is not beneficial for making solar cells using MVHF. By optimizing the deposition conditions, a 10.8% initial efficiency of a-Si/a-SiGe/SiGe triple-junction solar cell was achieved at a deposition rate of 0.6 nm/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 115
Copyright
Copyright © Materials Research Society 1999

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