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Analysis of Laser-Enhanced Adsorption/Desorption Processes on Semiconductor Surfaces via Electronic Surface State Excitation

Published online by Cambridge University Press:  15 February 2011

William C. Murphy ,
A. C. Beri ,
Thomas F. George  and
Jui-Teng Lin
William C. Murphy
Affiliation:
Department of Chemistry, University of Rochester, Rochester, New York, 14627, USA
A. C. Beri
Affiliation:
Department of Chemistry, University of Rochester, Rochester, New York, 14627, USA
Thomas F. George
Affiliation:
Department of Chemistry, University of Rochester, Rochester, New York, 14627, USA
Jui-Teng Lin
Affiliation:
Laser Physics Branch, Optical Sciences Division, Naval Research Laboratory, Washington, D.C. 20375, USA
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Abstract

Electronic surface states in semiconductors often lie between the valence and conduction bands and give rise to charge densities confined to the surface region. Laser radiation of frequency less than the energy gap can excite electrons from delocalized valence band states to these localized surface states leading to large changes in the charge distribution at the surface. Selective enhancement of adsorption/desorption processes involving ionic or polar adspecies can result from such a charge redistribution. Using a onedimensional model for silicon, the cross-section for the laser-induced electronic transition to surface states is shown to be large. The interaction energy of an adspecies with the surface changes significantly with direct excitation of surface states in a semiconductor. For a one-dimensional metal, however, direct transitions between bulk and surface states are not allowed, but phonon-mediated transitions coupled with laser radiation lead to substantial charge transfer as for semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 273
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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