Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T15:13:15.948Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor

Published online by Cambridge University Press:  01 February 2011

Hong Luo ,
Jong Kyu Kim ,
Yangang Xi ,
E. Fred Schubert ,
Jaehee Cho ,
Cheolsoo Sone  and
Yongjo Park
Hong Luo
Affiliation:
[email protected], Rensselaer Polytechnic Institute, 110 8th ST, Troy, NY, 12180, United States, 518-276-3328
Jong Kyu Kim
Affiliation:
[email protected]
Yangang Xi
Affiliation:
[email protected]
E. Fred Schubert
Affiliation:
[email protected]
Jaehee Cho
Affiliation:
[email protected]
Cheolsoo Sone
Affiliation:
[email protected]
Yongjo Park
Affiliation:
[email protected]
Get access

Abstract

An optimized packaging configuration for high-power white-light-emitting diode (LED) lamps that employs a diffuse reflector cup, a remote phosphor and a hemi-spherically-shaped encapsulation is presented. Ray tracing simulations for this configuration show that the phosphor efficiency can be enhanced by up to 50% over conventional packages. It is experimentally shown that dichromatic LED lamps with remote phosphor and diffuse reflector cup configuration have higher phosphor efficiency by 15.4% for blue-pumped yellow phosphor and by 27% for ultraviolet-pumped blue phosphor over conventional packages. Those improvements are attributed to reduced absorption of the phosphorescence by the LED chip and the reduction of deterministic optical modes trapped inside the encapsulant.

Keywords

packagingoptoelectronicoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF09-07
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Steranka, F. M., Bhat, J., Collins, D., Cook, L., Craford, M. G., Fletcher, R., Gardner, N., Grillot, P., Keuper, M., Khare, R., Kim, A., Krames, M., Harbers, G., Ludowise, M., Martin, P.S., Misra, M., Mueller, G., Mueller-Mach, R., Rudaz, S., Shen, Y.-C., Steigerwald, D., Stockman, S., Subramanya, S., Trottier, T., and Wierer, J.J., Phys. Status. Solidi A 194, 380 (2002).3.0.CO;2-N>CrossRef3.0.CO;2-N>Google Scholar
2. Steigerwald, D. A., Bhat, J. C., Collins, D., Fletcher, R. M., Holcomb, M. W., Ludowise, M. J., Martin, P. S., and Rudaz, S. L., IEEE Journal on Selected Topics in Quantum Electronics 8, 310 (2002).CrossRefGoogle Scholar
3. Mueller-Mach, R., Mueller, G., Krames, M., and Trottier, T., IEEE Journal on Selected Topics in Quantum Electronics 8, 339 (2002).CrossRefGoogle Scholar
4. Kim, J. K., Luo, H., Schubert, E. F., Cho, J., Sone, C., and Park, Y., Japan. J. Appl. Phys. 44, L649 (2005)Google Scholar
5. Narendran, N., Narendran, N., Gu, Y., Freyssinier-Nova, J. P., and Zhu, Y., Phys. Status Solidi A 202, R60 (2005).CrossRefGoogle Scholar
6. Goetz, W., 5th International Conference on Nitride Semiconductor, ICNS-5, Nara, Japan, May 25–30 (2003).Google Scholar
7. Kim, Jong Kyu, Gessmann, Thomas, Luo, Hong, and Fred Schubert, E., Appl. Phys. Lett. 84, 4508 (2004).Google Scholar