Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-19T05:16:46.283Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Ferroelectric Microcapacitors by Scanning Probe Microscope

Published online by Cambridge University Press:  28 July 2011

Nobuhiro Kin  and
Koichiro Honda
Nobuhiro Kin
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
Koichiro Honda
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
Get access

Abstract

To develop higher density FRAM requires reducing cell size. Therefore, the size effects resulting from device processing and the material's physical properties must be measured. Therefore, analyzing the electric characteristics of a single bit cell capacitor has become important. Two known characteristics of ferroelectric material are that the Vc increases at low temperatures, and the Pr falls at high temperatures. To further evaluate the impact of temperature on ferroelectrics, we constructed a new evaluation system based on a scanning probe microscope, that can measure the electric characteristics of a single bit cell capacitor. This system can be used in the temperature range from −120 degrees to 300 degrees C. We accomplished this by circulating liquid nitrogen around a SPM stage and by using an electrical heater. We measured the electrical properties of ferroelectric microcapacitors by using a sample with IrOx/PZT/Pt structure. Our measurements revealed that 2Pr really increases at low temperatures, and Pr decreases at high temperatures. That is, we have shown that Vc increases 30% at low temperatures and Pr decreases 10% also in an actual FRAM single bit cell capacitor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.28
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kholkine, L., Wuetchrich, C., Taylor, D. V. and Setter, N., Rev. Sci. Instrum., 67, 1935 (1996).Google Scholar
2 Xu, F., Troiler-Mckinstry, S., Ren, W., Xu, B., Xie, Z. L., and Hemker, K. J., J. Appl. Phys., 89, 1336 (2001).Google Scholar
3 Maiwa, H., Kim, S. H. and Ichinose, N., Appl. Phys. Lett., 83, 4396 (2003).Google Scholar
4 Gruverman, A., Auciello, O. and Tokumoto, H., Appl. Phys. Lett., 69, 3139 (1996).Google Scholar
5 Cho, Y., Kazuta, S. and Katsuura, M., Appl. Phys. Lett., 75, 2833 (1999).Google Scholar
6 Cho, Y., Ohara, K., Koike, A. and Odawara, H., Jpn. J. Appl. Phys., 40, 3544 (2001).Google Scholar