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Analysis of Dislocation Networks and Electronic Properties of Dendritic Web Silicon

Published online by Cambridge University Press:  26 February 2011

S. L. Morelhão ,
D. L. Meier ,
G. T. Neugebauer ,
B. B. Bathey  and
S. Mahajan
S. L. Morelhão
Affiliation:
Dept. of MS&E, Carnegie Mellon University, Pittsburgh PA 15213, USA
D. L. Meier
Affiliation:
EBARA Solar, Inc., Large PA 15025, USA
G. T. Neugebauer
Affiliation:
EBARA Solar, Inc., Large PA 15025, USA
B. B. Bathey
Affiliation:
EBARA Solar, Inc., Large PA 15025, USA
S. Mahajan
Affiliation:
Dept. of MS&E, Carnegie Mellon University, Pittsburgh PA 15213, USA
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Abstract

During the growth of dendritic web silicon, an ideal material for fabrication of high efficiency solar cells, a thin ribbon of silicon single crystal is obtained. Due to thermal stresses characteristic in this growth process, dislocations and residual stresses are observed in most ribbons. In this study, transmission X-ray topography was used for analyzing dislocation networks in as-grown web silicon. We were able to correlate minority carrier diffusion length with the configuration of the networks that are strongly affected by twin planes lying midway across the web thickness. Analysis of the networks is also useful in providing information regarding regions of high stress levels associated with a given growth environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 29
Copyright
Copyright © Materials Research Society 1995

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