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Analysis of Defects in Heavily-Doped MBE-GaAs

Published online by Cambridge University Press:  15 February 2011

C.B. Carter ,
D.M. Desimone ,
H.T. Griem  and
C.E.C. Wood
C.B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall And Department of Electrical Engineering And NRRFSS, Phillips Hall, Cornell University, Ithaca, New York 14853
D.M. Desimone
Affiliation:
Department of Materials Science and Engineering, Bard Hall And Department of Electrical Engineering And NRRFSS, Phillips Hall, Cornell University, Ithaca, New York 14853
C.E.C. Wood
Affiliation:
Department of Materials Science and Engineering, Bard Hall And Department of Electrical Engineering And NRRFSS, Phillips Hall, Cornell University, Ithaca, New York 14853
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Abstract

GaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 271
Copyright
Copyright © Materials Research Society 1982

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References

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